Preliminary
Product Description
Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation ...
Preliminary
Product Description
Sirenza Microdevices’ SGA-9289 is a high performance
transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar
Transistor (SiGe HBT) process. The SGA-9289 is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.
SGA-9289 SGA-9289Z
Pb
RoHS Compliant & Green Package
Medium Power Discrete SiGe
Transistor
Product Features
Available in RoHS compliant Green packaging 50-3000 MHz Operation 42.5 dBm Ouput IP3 Typical at 1.96 GHz 12.0 dB Gain Typical at 1.96 GHz 27.5 dBm P1dB Typical at 1.96 GHz 2.4 dB NF Typical at 0.9 GHz Cost Effective 3-5 V Operation
Typical Gmax, OIP3, P1dB @ 5V,270mA
25 23 21 19 44
OIP3
42 38 36
17 15 13 11 9 7 5 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Gmax
OIP3, P1dB (dBm)
40
Gmax (dB)
34 32 30 28 26 24
Applications
Wireless Infrastructure Driver Amplifiers CATV Amplifiers Wireless Data, WLL Amplifiers AN-022 contains detailed application circuits
P1dB
Frequency (GHz)
Symbol
Test Frequency Dev...