SLD-1083CZ

SLD-1083CZ Product Description Sirenza Microdevices’ SLD-1083CZ is a robust 4 Watt high performance LDMOS transistor designed for operation from to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at a low cost. The SLD-1083CZ is typically used in the design of driver stages for power amplifiers, repeaters, and RFID applications.The power transistor is fabricated using Sirenza’s latest, high performance LDMOS II process. Pb RoHS Compliant & Green Package 4 Watt Discrete LDMOS FET in Ceramic Package Functional Schematic Diagram ESD Protection Product Features 4 Watt Output P1dB Single Polarity Supply Voltage High Gain: 18 dB at 915 MHz High Efficiency: 43% at 3W CW XeMOS II LDMOS Integrated ESD Protection, Class 1B Applications Base Station PA driver Repeaters RFID Military Communication GSM/CDMA Unit MHz dB % dB dBc Watt dBm dBm ºC/W Min 18 40 -9.5 Typ 19 43 -12 -30 4 21 29 11 Max 2700 -26 - Case Flange = Ground RF Specifications Symbol Frequency Gain Efficiency IRL Parameter Frequency of Operation 3 Watt CW, 902-928MHz Drain Efficiency at 3 Watt CW, 915MHz Input Return Loss, 3 Watt Output Power, 915MHz 3rd Order IMD at 3 Watt PEP (Two Tone), 915MHz 1dB Compression (P1dB), 915MHz Linearity IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth, ACPR=-55dB IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth, ACPR=-45dB RTH Test Conditions Thermal Resistance (Junction-to-Case) VDS = 28.0V,...