SLD-1083CZ
Product Description
Sirenza Microdevices’ SLD-1083CZ is a robust 4 Watt high performance LDMOS transistor des...
SLD-1083CZ
Product Description
Sirenza Microdevices’ SLD-1083CZ is a robust 4 Watt high performance LDMOS
transistor designed for operation from to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at a low cost. The SLD-1083CZ is typically used in the design of driver stages for power amplifiers, repeaters, and RFID applications.The power
transistor is fabricated using Sirenza’s latest, high performance LDMOS II process.
Pb
RoHS Compliant & Green Package
4 Watt Discrete LDMOS FET in Ceramic Package
Functional Schematic Diagram
ESD Protection
Product Features
4 Watt Output P1dB Single Polarity Supply Voltage High Gain: 18 dB at 915 MHz High Efficiency: 43% at 3W CW XeMOS II LDMOS Integrated ESD Protection, Class 1B
Applications
Base Station PA driver Repeaters RFID Military Communication GSM/CDMA
Unit MHz dB % dB dBc Watt dBm dBm ºC/W Min 18 40 -9.5 Typ 19 43 -12 -30 4 21 29 11 Max 2700 -26 -
Case Flange = Ground
RF Specifications
Symbol Frequency Gain Efficiency IRL Parameter Frequency of Operation 3 Watt CW, 902-928MHz Drain Efficiency at 3 Watt CW, 915MHz
Input Return Loss, 3 Watt Output Power, 915MHz 3rd Order IMD at 3 Watt PEP (Two Tone), 915MHz 1dB Compression (P1dB), 915MHz
Linearity
IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth, ACPR=-55dB IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth, ACPR=-45dB
RTH Test Conditions
Thermal Resistance (Junction-to-Case) VDS = 28.0V,...