BTD1758J3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C842J3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4 BTD1758J3 Features Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A Excellent current gain characteristics Complementary to BTB1182J3 Symbol BTD1758J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : Single Pulse , Pw=10ms Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits 40 30 5 2 5 (Note) 10 150 -55~+150 Unit V V V A A W °C °C BTD1758J3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 40 30 5 82 Typ. 100 50 Max. 1 1 1 560 Unit V V V µA µA V MHz pF Spec. No. : C842J3 Issued Date : 2003.05.25 Revised Date : Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=20V, IE=0 VEB=4V, IC=0 IC=3A, IB=0.1A VCE=3V, IC=0.5A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f =1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE Rank Range P 82~180 Q 120~270 R 180~390 S 270~560 BTD1758J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 VCE=5V 10000 VCE(SAT) Spec. No. : C842J3 Issued Date :...