Planar Transistor. BTD1758J3 Datasheet

BTD1758J3 Transistor. Datasheet pdf. Equivalent

Part BTD1758J3
Description NPN Epitaxial Planar Transistor
Feature CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C842J3 Issued Date.
Manufacture Cystech Electonics
Total Page 4 Pages
Datasheet
Download BTD1758J3 Datasheet



BTD1758J3
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1758J3
Features
Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A
Excellent current gain characteristics
Complementary to BTB1182J3
Spec. No. : C842J3
Issued Date : 2003.05.25
Revised Date :
Page No. : 1/4
Symbol
BTD1758J3
Outline
TO-252
BBase
CCollector
EEmitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation (TC=25)
Junction Temperature
Storage Temperature
Note : Single Pulse , Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
BTD1758J3
Limits
40
30
5
2
5 (Note)
10
150
-55~+150
Unit
V
V
V
A
A
W
°C
°C
CYStek Product Specification



BTD1758J3
CYStech Electronics Corp.
Spec. No. : C842J3
Issued Date : 2003.05.25
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
40
30
5
-
-
-
82
-
-
Typ.
-
-
-
-
-
-
-
100
50
Classification Of hFE
Max.
-
-
-
1
1
1
560
-
-
Unit
V
V
V
µA
µA
V
-
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=20V, IE=0
VEB=4V, IC=0
IC=3A, IB=0.1A
VCE=3V, IC=0.5A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, f =1MHz
*Pulse Test : Pulse Width 380us, Duty Cycle2%
Rank
Range
P
82~180
Q
120~270
R
180~390
S
270~560
BTD1758J3
CYStek Product Specification





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