Planar Transistor. BTD1760J3 Datasheet

BTD1760J3 Transistor. Datasheet pdf. Equivalent

Part BTD1760J3
Description NPN Epitaxial Planar Transistor
Feature CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1760J3 BVCEO IC Spec. No..
Manufacture Cystech Electonics
Datasheet
Download BTD1760J3 Datasheet



BTD1760J3
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1760J3
BVCEO
IC
Spec. No. : C848J3
Issued Date : 2003.04.18
Revised Date : 2017.11.10
Page No. : 1/7
50V
3A
Features
Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A
Excellent current gain characteristics
Complementary to BTB1184J3
Pb-free lead plating and halogen-free package
Symbol
BTD1760J3
Outline
TO-252(DPAK)
BBase
CCollector
EEmitter
B CE
Ordering Information
Device
BTD1760J3-X-T3-G
Package
TO-252
(Pb-free lead plating package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3: 2500 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BTD1760J3
CYStek Product Specification



BTD1760J3
CYStech Electronics Corp.
Spec. No. : C848J3
Issued Date : 2003.04.18
Revised Date : 2017.11.10
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-Base Voltage
VCBO
50
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
5
Collector Current(DC)
IC 3
Collector Current(Pulse)
ICP 7
Power Dissipation(TA=25)
Pd(TA=25)
1
Power Dissipation(TC=25)
Pd(TC=25)
15
Junction Temperature
Tj 150
Storage Temperature
Tstg -55~+150
Note : *1. Single Pulse Pw=10ms
*2 Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger
*1
*2
Unit
V
V
V
A
W
°C
°C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient, max
Thermal Resistance, Junction-to-Case, max
Symbol
RθJA
RθJC
Limit
125
8.3
Unit
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
50
50
5
-
-
-
-
150
180
82
-
-
Typ.
-
-
-
-
-
0.25
-
-
-
-
90
13
Max.
-
-
-
1
1
0.5
2
-
560
-
-
-
Unit
V
V
V
µA
µA
V
V
-
-
-
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=30V, IE=0
VEB=4V, IC=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=0.1A
VCE=2V, IC=1A
VCE=5V, IC=0.5A, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380µs, Duty Cycle2%
Classification Of hFE2
Rank
Range
R
180~390
S
270~560
BTD1760J3
CYStek Product Specification





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