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BTD1760J3 Dataheets PDF



Part Number BTD1760J3
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description NPN Epitaxial Planar Transistor
Datasheet BTD1760J3 DatasheetBTD1760J3 Datasheet (PDF)

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1760J3 BVCEO IC Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2017.11.10 Page No. : 1/7 50V 3A Features • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB1184J3 • Pb-free lead plating and halogen-free package Symbol BTD1760J3 Outline TO-252(DPAK) B:Base C:Collector E:Emitter B CE Ordering Information Device BTD1760J3-X-T3-G .

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1760J3 BVCEO IC Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2017.11.10 Page No. : 1/7 50V 3A Features • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB1184J3 • Pb-free lead plating and halogen-free package Symbol BTD1760J3 Outline TO-252(DPAK) B:Base C:Collector E:Emitter B CE Ordering Information Device BTD1760J3-X-T3-G Package TO-252 (Pb-free lead plating package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3: 2500 pcs/tape & reel, 13” reel Product rank, zero for no rank products Product name BTD1760J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2017.11.10 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Collector-Base Voltage VCBO 50 Collector-Emitter Voltage VCEO 50 Emitter-Base Voltage VEBO 5 Collector Current(DC) IC 3 Collector Current(Pulse) ICP 7 Power Dissipation(TA=25℃) Pd(TA=25℃) 1 Power Dissipation(TC=25℃) Pd(TC=25℃) 15 Junction Temperature Tj 150 Storage Temperature Tstg -55~+150 Note : *1. Single Pulse Pw=10ms *2 Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger *1 *2 Unit V V V A W °C °C Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient, max Thermal Resistance, Junction-to-Case, max Symbol RθJA RθJC Limit 125 8.3 Unit °C/W Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 50 50 5 150 180 82 - Typ. 0.25 90 13 Max. 1 1 0.5 2 560 - Unit V V V µA µA V V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=0.1A VCE=2V, IC=1A VCE=5V, IC=0.5A, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE2 Rank Range R 180~390 S 270~560 BTD1760J3 CYStek Product Specification CYStech Electronics Corp. Typical Characteristics Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2017.11.10 Page No. : 3/7 Collector Current---IC(A) 0.25 0.2 0.15 0.1 0.05 0 0 Emitter Grounded Output Characteristics IB=500uA IB=400uA IB=300uA IB=200uA IB=100uA IB=0 1 234 5 Collector-to-Emitter Voltage---VCE(V) 6 Collector Current---IC(A) 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 Emitter Grounded Output Characteristics IB=2.5mA IB=2mA IB=1.5mA IB=1mA IB=500uA IB=0 12 3 45 Collector-to-Emitter Voltage---VCE(V) 6 Collector Current---IC(A) 3 2.5 2 1.5 1 0.5 0 0 Emitter Grounded Output Characteristics IB=10mA IB=8mA IB=6mA IB=4mA IB=2mA IB=0 12 34 5 Collector-to-Emitter Voltage---VCE(V) 6 Collector Current---IC(A) 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 Emitter Grounded Output Characteristics IB=25mA IB=20mA IB=15mA IB=10mA IB=5mA IB=0 1 234 5 Collector-to-Emitter Voltage---VCE(V) 6 Saturation Voltage---(mV) Current Gain---HFE Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 VCE=5V 10000 VCE(SAT) 100 VCE=2V 1000 IC=100IB IC=50IB VCE=1V 100 10 1 10 100 1000 Collector Current---IC(mA) 10000 10 1 IC=20IB 10 100 1000 Collector Current---IC(mA) 10000 BTD1760J3 CYStek Product Specification CYStech Electronics Corp. Typical Characteristics(Cont.) Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2017.11.10 Page No. : 4/7 10000 Saturation Voltage vs Collector Current VBE(SAT)@IC=10IB 1000 Capacitance---(pF) Capacitance vs Reverse-Biased Voltage 1000 100 Cib 10 Cob Saturation Voltage---(mV) Power Dissipation---PD(W) 100 1 10 100 1000 Collector Current---IC(mA) 10000 Power Derating Curve 1.2 1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 200 Ambient Temperature---TA(℃) Power Dissipation---PD(W) 1 0.1 16 14 12 10 8 6 4 2 0 0 1 10 Reverse-Biased Voltage---(V) Power Derating Curve 100 50 100 150 Case Temperature---TC(℃) 200 BTD1760J3 CYStek Product Specification Reel Dimension CYStech Electronics Corp. Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2017.11.10 Page No. : 5/7 Carrier Tape Dimension BTD1760J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2017.11.10 Page No. : 6/7 Recommended wave soldering condition Product Peak Temperature Pb-free devices 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) 100°C 150°C −Temperature Max(TS max) −Time(ts min to ts max) 150°C 60-120 seconds 200°C 60-180 seconds Time maintai.


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