Document
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1760J3
BVCEO IC
Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2017.11.10 Page No. : 1/7
50V 3A
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB1184J3 • Pb-free lead plating and halogen-free package
Symbol
BTD1760J3
Outline
TO-252(DPAK)
B:Base C:Collector E:Emitter
B CE
Ordering Information
Device BTD1760J3-X-T3-G
Package
TO-252 (Pb-free lead plating package)
Shipping 2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3: 2500 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BTD1760J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2017.11.10 Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-Base Voltage
VCBO
50
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
5
Collector Current(DC)
IC 3
Collector Current(Pulse)
ICP 7
Power Dissipation(TA=25℃)
Pd(TA=25℃)
1
Power Dissipation(TC=25℃)
Pd(TC=25℃)
15
Junction Temperature
Tj 150
Storage Temperature
Tstg -55~+150
Note : *1. Single Pulse Pw=10ms *2 Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger
*1 *2
Unit V V V A
W
°C °C
Thermal Performance
Parameter Thermal Resistance, Junction-to-Ambient, max Thermal Resistance, Junction-to-Case, max
Symbol
RθJA RθJC
Limit
125 8.3
Unit °C/W
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob
Min.
50 50 5 150 180 82 -
Typ.
0.25 90 13
Max.
1 1 0.5 2 560 -
Unit
V V V µA µA V V MHz pF
Test Conditions
IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=0.1A VCE=2V, IC=1A VCE=5V, IC=0.5A, f=100MHz VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE2
Rank Range
R 180~390
S 270~560
BTD1760J3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2017.11.10 Page No. : 3/7
Collector Current---IC(A)
0.25 0.2
0.15 0.1
0.05 0 0
Emitter Grounded Output Characteristics
IB=500uA
IB=400uA IB=300uA IB=200uA IB=100uA
IB=0
1 234 5 Collector-to-Emitter Voltage---VCE(V)
6
Collector Current---IC(A)
1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
0 0
Emitter Grounded Output Characteristics
IB=2.5mA IB=2mA IB=1.5mA IB=1mA
IB=500uA
IB=0
12 3 45 Collector-to-Emitter Voltage---VCE(V)
6
Collector Current---IC(A)
3 2.5
2 1.5
1 0.5
0 0
Emitter Grounded Output Characteristics
IB=10mA IB=8mA IB=6mA IB=4mA
IB=2mA
IB=0
12 34 5 Collector-to-Emitter Voltage---VCE(V)
6
Collector Current---IC(A)
4.5 4
3.5 3
2.5 2
1.5 1
0.5 0 0
Emitter Grounded Output Characteristics
IB=25mA IB=20mA IB=15mA IB=10mA
IB=5mA
IB=0
1 234 5 Collector-to-Emitter Voltage---VCE(V)
6
Saturation Voltage---(mV)
Current Gain---HFE
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
VCE=5V
10000
VCE(SAT)
100 VCE=2V
1000
IC=100IB
IC=50IB
VCE=1V
100
10 1
10 100 1000 Collector Current---IC(mA)
10000
10 1
IC=20IB
10 100 1000 Collector Current---IC(mA)
10000
BTD1760J3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2017.11.10 Page No. : 4/7
10000
Saturation Voltage vs Collector Current
VBE(SAT)@IC=10IB
1000
Capacitance---(pF)
Capacitance vs Reverse-Biased Voltage 1000
100 Cib
10 Cob
Saturation Voltage---(mV)
Power Dissipation---PD(W)
100 1
10 100 1000 Collector Current---IC(mA)
10000
Power Derating Curve 1.2
1
0.8
0.6
0.4
0.2
0 0 25 50 75 100 125 150 175 200 Ambient Temperature---TA(℃)
Power Dissipation---PD(W)
1 0.1
16 14 12 10 8 6 4 2 0
0
1 10 Reverse-Biased Voltage---(V)
Power Derating Curve
100
50 100 150 Case Temperature---TC(℃)
200
BTD1760J3
CYStek Product Specification
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2017.11.10 Page No. : 5/7
Carrier Tape Dimension
BTD1760J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2017.11.10 Page No. : 6/7
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate (Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
100°C
150°C
−Temperature Max(TS max) −Time(ts min to ts max)
150°C 60-120 seconds
200°C 60-180 seconds
Time maintai.