BTD1766M3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1766M3 BVCEO IC RCESAT(typ) Spec. No. : C858M3 Issued Date : 2011.12.20 Revised Date : 2013.08.12 Page No. : 1/8 32V 2A 150mΩ Features Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1188M3 Pb-free lead plating and halogen-free package Symbol BTD1766M3 Outline SOT-89 B：Base C：Collector E：Emitter BC E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Power Dissipation PD Operating Junction and Storage Temperature Range Tj ; Tstg Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm 2. When mounted on ceramic with area measuring 40×40×1 mm BTD1766M3 Limit 60 32 6 2 4 0.6 1 (Note 1) 2 (Note 2) -55~+150 Unit V V V A A W °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C858M3 Issued Date : 2011.12.20 Revised Date : 2013.08.12 Page No. : 2/8 Thermal Characteristics Parameter Symbol Thermal Resistance, Junction to Ambient RθJA Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm 2 . When mounted on ceramic with area measuring 40×40×1 mm Value 208 125 (Note 1) 62.5 (Note 2) Unit °C/W Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *RCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 60 32 6 - - 160 180 150 - Typ...