CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1766M3
BVCEO IC RCESAT(typ)
Spec. No. : C858M...
CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
BTD1766M3
BVCEO IC RCESAT(typ)
Spec. No. : C858M3 Issued Date : 2011.12.20 Revised Date : 2013.08.12 Page No. : 1/8
32V 2A 150mΩ
Features
Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1188M3 Pb-free lead plating and halogen-free package
Symbol
BTD1766M3
Outline
SOT-89
B:Base C:Collector E:Emitter
BC E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Power Dissipation
PD
Operating Junction and Storage Temperature Range
Tj ; Tstg
Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm 2. When mounted on ceramic with area measuring 40×40×1 mm
BTD1766M3
Limit
60 32 6 2 4 0.6 1 (Note 1) 2 (Note 2) -55~+150
Unit V V V A A
W
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C858M3 Issued Date : 2011.12.20 Revised Date : 2013.08.12 Page No. : 2/8
Thermal Characteristics
Parameter
Symbol
Thermal Resistance, Junction to Ambient
RθJA
Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 . When mounted on ceramic with area measuring 40×40×1 mm
Value 208
125 (Note 1)
62.5 (Note 2)
Unit °C/W
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO *VCE(sat)
*RCE(sat)
*VBE(sat) *hFE1 *hFE2 *hFE3
fT Cob
Min.
60 32 6 -
-
160 180 150
-
Typ...