Planar Transistor. BTD1768A3 Datasheet

BTD1768A3 Transistor. Datasheet pdf. Equivalent

Part BTD1768A3
Description NPN Epitaxial Planar Transistor
Feature CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1768A3 Spec. No. : C30.
Manufacture Cystech Electonics
Datasheet
Download BTD1768A3 Datasheet



BTD1768A3
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD1768A3
Spec. No. : C304A3
Issued Date : 2003.07.28
Revised Date :2017.05.16
Page No. : 1/6
Description
The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose
application.
Features
Low collector saturation voltage
High breakdown voltage, VCEO=80V (min.)
High collector current, IC(max)=1A (DC)
Pb-free lead plating and halogen-free package
Symbol
BTD1768A3
Outline
TO-92
BBase
CCollector
EEmitter
ECB
Ordering Information
Device
BTD1768A3-X-TB-G
BTD1768A3-X-BK-G
Package
TO-92
(Pb-free lead plating and halogen-free package)
TO-92
(Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / Tape & Box
1000 pcs/ bag, 10 bags/box,
10boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTD1768A3
CYStek Product Specification



BTD1768A3
CYStech Electronics Corp.
Spec. No. : C304A3
Issued Date : 2003.07.28
Revised Date :2017.05.16
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj
Tstg
Note : Pulse test, PW 10ms, Duty 50%.
Limits
150
80
7
1
2 (Note)
750
167
-55~+150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(SAT)
*VCE(SAT)
*VBE(SAT)
*hFE 1
*hFE 2
fT
Cob
Min.
150
80
5
-
-
-
-
-
120
60
-
-
Typ.
-
-
-
-
-
0.15
-
-
-
-
100
20
Max.
-
-
-
100
100
0.3
0.5
1.2
560
-
-
-
Unit
V
V
V
nA
nA
V
V
V
-
-
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=150V, IE=0
VEB=7V, IC=0
IC=500mA, IB=20mA
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=3V, IC=100mA
VCE=3V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Classification Of hFE 1
Rank
Range
Q
120~270
R
200~400
S
270~560
BTD1768A3
CYStek Product Specification





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)