Planar Transistor. BTD1768N3 Datasheet

BTD1768N3 Transistor. Datasheet pdf. Equivalent

Part BTD1768N3
Description NPN Epitaxial Planar Transistor
Feature CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1768N3 Spec. No. : C30.
Manufacture Cystech Electonics
Datasheet
Download BTD1768N3 Datasheet



BTD1768N3
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD1768N3
Spec. No. : C304N3
Issued Date : 2005.01.10
Revised Date :2014.07.01
Page No. : 1/7
Description
The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose
application.
Features
Low collector saturation voltage
High breakdown voltage, VCEO=80V (min.)
High collector current, IC(max)=1A (DC)
Pb-free lead plating and halogen-free package
Symbol
BTD1768N3
Outline
SOT-23
BBase
CCollector
EEmitter
Ordering Information
Device
BTD1768N3-X-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTD1768N3
CYStek Product Specification



BTD1768N3
CYStech Electronics Corp.
Spec. No. : C304N3
Issued Date : 2005.01.10
Revised Date :2014.07.01
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Note : Pulse test, PW 10ms, Duty 50%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj ; Tstg
Limits
100
80
5
1
2 (Note)
225
556
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(SAT)
*hFE
fT
Cob
Min.
100
80
5
-
-
-
120
-
-
Typ.
-
-
-
-
-
0.15
-
100
20
Max.
-
-
-
1
1
0.4
560
-
-
Unit
V
V
V
μA
μA
V
-
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=80V, IE=0
VEB=4V, IC=0
IC=500mA, IB=20mA
VCE=3V, IC=100mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Classification Of hFE
Rank
Range
Q
120~270
R
180~390
S
270~560
BTD1768N3
CYStek Product Specification





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)