Planar Transistor. BTD1805I3 Datasheet

BTD1805I3 Transistor. Datasheet pdf. Equivalent

Part BTD1805I3
Description Low Vcesat NPN Epitaxial Planar Transistor
Feature CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1805I3 Spec. No. : C820I3 I.
Manufacture Cystech Electonics
Datasheet
Download BTD1805I3 Datasheet



BTD1805I3
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1805I3
Spec. No. : C820I3
Issued Date : 2004.12.19
Revised Date :2012.09.19
Page No. : 1/ 8
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
Very low collector-to-emitter saturation voltage
Fast switching speed
High current gain characteristic
Large current capability
RoHS compliant package
Applications
CCFL drivers
Voltage regulators
Relay drivers
High efficiency low voltage switching applications
Symbol
BTD1805I3
Outline
TO-251AB
TO-251S
BBase
CCollector
EEmitter
BTD1805I3
B CE
BCE
CYStek Product Specification



BTD1805I3
CYStech Electronics Corp.
Spec. No. : C820I3
Issued Date : 2004.12.19
Revised Date :2012.09.19
Page No. : 2/ 8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage (IE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @ TA=25
Power Dissipation @ TC=25
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
120
60
7
5
10 (Note 1)
2
1
15
125
8.33
150
-55~+150
Unit
V
A
W
°C/W
°C
Note : 1. Single Pulse , Pw 300μs,Duty 2%.
Characteristics (Ta=25°C)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VCE(sat) 4
*VBE(sat)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
ton
tstg
tf
Min.
120
60
7
-
-
-
-
-
-
-
200
85
20
-
-
-
-
-
Typ.
-
-
-
-
-
14
130
160
300
0.9
-
-
-
150
50
50
1.35
120
Max.
-
-
-
0.1
0.1
50
300
300
600
1.2
400
-
-
-
-
-
-
-
Unit
V
V
V
μA
μA
mV
mV
mV
mV
V
-
-
-
MHz
pF
ns
μs
ns
Test Conditions
IC=100μA, IE=0
IC=1mA, IB=0
IC=100μA, IC=0
VCB=100V, IE=0
VEB=7V, IC=0
IC=100mA, IB=5mA
IC=2A, IB=50mA
IC=3A, IB=150mA
IC=5A, IB=200mA
IC=2A, IB=100mA
VCE=2V, IC=100mA
VCE=2V, IC=5A
VCE=2V, IC=10A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
VCC=30V, IC=10IB1=-10IB2=1A,
RL=30Ω
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
BTD1805I3-0-UB-G
Package
TO-251
(RoHS compliant and halogen-free package)
Shipping
80 pcs / tube, 50 tubes / box
BTD1805I3
CYStek Product Specification





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