BTD1805I3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1805I3 Spec. No. : C820I3 Issued Date : 2004.12.19 Revised Date :2012.09.19 Page No. : 1/ 8 Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features Very low collector-to-emitter saturation voltage Fast switching speed High current gain characteristic Large current capability RoHS compliant package Applications CCFL drivers Voltage regulators Relay drivers High efficiency low voltage switching applications Symbol BTD1805I3 Outline TO-251AB TO-251S B：Base C：Collector E：Emitter BTD1805I3 B CE BCE CYStek Product Specification CYStech Electronics Corp. Spec. No. : C820I3 Issued Date : 2004.12.19 Revised Date :2012.09.19 Page No. : 2/ 8 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage (IE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg Limits 120 60 7 5 10 (Note 1) 2 1 15 125 8.33 150 -55~+150 Unit V A W °C/W °C Note : 1. Single Pulse , Pw ≤300μs,Duty ≤2%. Characteristics (Ta=25°C) Symbol BVCBO *BVCE...