BTD1857AI3

CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857AI3 Spec. No. : C855I3 Issued Date : 2004.09.16 Revised Date :2017.12.08 Page No. : 1/6 Description High BVCEO High current capability Complementary to BTB1236AI3 RoHS compliant package Symbol BTD1857AI3 Outline TO-251 B：Base C：Collector E：Emitter BCE Ordering Information Device BTD1857AI3-0-UA-G Package TO-251 (Pb-free lead plating and halogen-free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec,UA : 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name BTD1857AI3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 180 160 5 1.5 3 1 10 150 -55~+150 Spec. No. : C855I3 Issued Date : 2004.09.16 Revised Date :2017.12.08 Page No. : 2/6 Unit V V V A A W W °C °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 12.5 125 Unit °C/W °C/W Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. 180 160 5 1...