BTD1857AL3

CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857AL3 Spec. No. : C855L3 Issued Date : 2005.06.17 Revised Date : 2010.12.31 Page No. : 1/7 Description High BVCEO High current capability Complementary to BTB1236AL3 Pb-free lead plating package Symbol BTD1857AL3 B：Base C：Collector E：Emitter Outline SOT-223 C E C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 180 160 5 1.5 3 5 150 -55~+150 Unit V V V A A W °C °C BTD1857AL3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C855L3 Issued Date : 2005.06.17 Revised Date : 2010.12.31 Page No. : 2/7 Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 180 - - V IC=50µA, IE=0 BVCEO 160 - - V IC=1mA, IB=0 BVEBO 5 - - V IE=50µA, IC=0 ICBO - - 1 µA VCB=160V, IE=0 IEBO - - 1 µA VEB=4V, IC=0 *VCE(sat) - - 0.6 V IC=1A, IB=100mA *VBE(on) - - 1.5 V VCE=2V, IC=150mA hFE1 180 - 390 - VCE=2V, IC=150mA hFE2 50 - - - VCE=2V, IC=500mA fT - 140 - MHz VCE=5V, IC=150mA Cob - 27 - pF VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Ordering Information Device BTD1857AL3 Package SOT-223 (Pb-free lead plating package) Shipping 2500 pcs / Tape & Reel Marking DQ BTD1857AL3 CYStek Pr...