BTD1857AM3

CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857AM3 BVCEO IC RCESAT(MAX) Spec. No. : C855M3-R Issued Date : 2004.08.06 Revised Date : 2013.10.31 Page No. : 1/6 160V 1.5A 0.3Ω Description High BVCEO High current capability Complementary to BTB1236AM3 Pb-free lead plating and halogen-free package Symbol BTD1857AM3 Outline SOT-89 B：Base C：Collector E：Emitter BC E Ordering Information Device BTD1857AM3-X-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 :1000 pcs/tape & reel, 7” reel Product rank, zero for no rank products Product name BTD1857AM3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C855M3-R Issued Date : 2004.08.06 Revised Date : 2013.10.31 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Power Dissipation PD Operating Junction and Storage Temperature Range Tj ; Tstg Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm 2 . When mounted on ceramic with area measuring 40×40×1 mm Limits 180 160 5 1.5 3 0.6 1 (Note 1) 2 (Note 2) -55~+150 Unit V V V A A W °C Thermal Characteristics Parameter Symbol Thermal Resistance, Junction to Ambient RθJA Therm...