BTD1857AT3

CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857AT3 Spec. No. : C855T3 Issued Date : 2004.12.15 Revised Date :2018.07.02 Page No. : 1/6 Description  High BVCEO  High current capability  Complementary to BTB1236AT3  Pb-free lead plating and halogen-free package Symbol BTD1857AT3 Outline TO-126 B：Base C：Collector E：Emitter ECB Ordering Information Device BTD1857AT3-0-BL-X BTD1857AT3-0-UH-X Package TO-126 (Pb-free lead plating and halogen-free package) Shipping 200 pcs / bag, 3,000 pcs/box 30,000 pcs/carton 60 pcs/ tube, 40 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, BL: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton ; UH : tube, 60 pcs/tube, 40 tubes/box Product rank, zero for no rank products Product name BTD1857AT3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 280 200 5 1.5 3 1 20 150 -55~+150 Spec. No. : C855T3 Issued Date : 2004.12.15 Revised Date :2018.07.02 Page No. : 2/6 Unit V V V A A W W C C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a...