CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTD1857AT3
Spec. No. : C855T3 Issued Date : 2004.12.1...
CYStech Electronics Corp.
Silicon
NPN Epitaxial Planar
Transistor
BTD1857AT3
Spec. No. : C855T3 Issued Date : 2004.12.15 Revised Date :2018.07.02 Page No. : 1/6
Description
High BVCEO High current capability Complementary to BTB1236AT3 Pb-free lead plating and halogen-free package
Symbol
BTD1857AT3
Outline
TO-126
B:Base C:Collector E:Emitter
ECB
Ordering Information
Device BTD1857AT3-0-BL-X BTD1857AT3-0-UH-X
Package
TO-126 (Pb-free lead plating and halogen-free
package)
Shipping
200 pcs / bag, 3,000 pcs/box 30,000 pcs/carton
60 pcs/ tube, 40 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, BL: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton ; UH : tube, 60 pcs/tube,
40 tubes/box
Product rank, zero for no rank products
Product name
BTD1857AT3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP
PD
Tj Tstg
Limits
280 200 5 1.5 3 1 20 150 -55~+150
Spec. No. : C855T3 Issued Date : 2004.12.15 Revised Date :2018.07.02 Page No. : 2/6
Unit
V V V A A W W C C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max
Symbol Rth,j-c Rth,j-a...