CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C842I3 Issued Date : 2003.07.02 Revise...
CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
Spec. No. : C842I3 Issued Date : 2003.07.02 Revised Date : Page No. : 1/4
BTD1862I3
Features
Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A Excellent current gain characteristics Complementary to BTB1240I3
Symbol
BTD1862I3
Outline
TO-251
B:Base C:Collector E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature
Note : Single Pulse , Pw=10ms
Symbol VCBO VCEO VEBO IC ICP Pd Pd Tj Tstg
Limits 40 30 5 2 5 (Note) 1 10 150 -55~+150
Unit V V V A A W W °C °C
BTD1862I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 40 30 5 82 Typ. 100 50 Max. 1 1 1 560 Unit V V V µA µA V MHz pF
Spec. No. : C842I3 Issued Date : 2003.07.02 Revised Date : Page No. : 2/4
Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=20V, IE=0 VEB=4V, IC=0 IC=3A, IB=0.1A VCE=3V, IC=0.5A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f =1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank Range P 82~180 Q 120~270 R 180~390 S 270~560
BTD1862I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=5V 10000 VCE(SAT)...