BTD1864AI3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C849I3 Issued Date : 2003.04.18 Revised Date : Page No. : 1/4 BTD1864AI3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1243AI3 Symbol BTD1864AI3 Outline TO-251 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits 40 30 5 3 7 1 15 150 -55~+150 Unit V V V *1 A W °C °C BTD1864AI3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 40 30 5 52 82 82 Typ. 0.25 90 45 Max. 1 1 0.5 2 560 Unit V V V µA µA V V MHz pF Spec. No. : C849I3 Issued Date : 2003.04.18 Revised Date : Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=30V. IE=0 VEB=4V,IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=0.1A VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE2 Rank Range P 82~180 Q 120~270 R 180~390 S 270~560 BTD1864AI3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs C...