FMS2003QFN-1

Preliminary Data Sheet 2.1 FMS2003QFN-1 High Power Reflective GaAs SP4T Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3x3x0.9mm Packaged pHEMT Switch NiPdAu finish for Military and High reliability applications Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels High isolation: >30dB at 0.9GHz Low Insertion loss: 0.5dB at 0.9GHz Low control current Functional Schematic ANT RF1 RF2 RF3 RF4 Description and Applications: The FMS2003QFN is a low loss, high power and linear single pole four throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology, which offers excellent performance optimised for switch applications. The FMS2003QFN is designed for use in dual/tri and quad band GSM handset antenna switch modules and RF front-end modules. It can also find use in other applications where high power and linear RF switching is necessary. Electrical Specifications: Parameter Insertion Loss Return Loss (TAMBIENT = 25°C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50Ω) Test Conditions 0.5 – 1.0 GHz 1.0 – 2.0 GHz 0.5 – 2.5 GHz 0.5 – 1.0 GHz 1.0 – 2.0 GHz 1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 GHz, Pin = +33dBm, 100% Duty Cycle 1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 GHz, Pin = +33dBm, 100% Duty Cycle 10% to 90% RF 90% to 10% RF 0.5 – 1.0 GHz 1.0 – 2.0 GHz 0.5 – 1.0 GHz 1.0 – 2.0 GHz Tx1 836Hz Tx2 837MHz +21dBm Rx1 880MHz –25dBm Tx1 1879.5MHz Tx2...