FMS2016QFN-1

Preliminary Data Sheet 2.1 FMS2016QFN-1 High Power Reflective GaAs SP4T Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3x3x0.9mm Packaged pHEMT Switch NiPdAu finish for Military and High reliability applications Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high isolation: >29dB at 1.8GHz Very low Insertion loss: 0.65dB at 1.8GHz Very low control current Functional Schematic ANT RF1 RF2 RF3 RF4 Description and Applications: The FMS2016QFN is a low loss, high power and linear single pole four throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology, which offers excellent performance optimised for switch applications. The FMS2016QFN is designed for use in dual/tri and quad band GSM handset antenna switch modules and RF front-end modules. It can also find use in other applications where high power and linear RF switching is necessary. Electrical Specifications: Parameter Insertion Loss (TAMBIENT = 25°C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50Ω) Test Conditions 0.5 – 1.0 GHz 1.0 – 2.0 GHz Min Typ <0.55 <0.65 20 34 32 34 32 34 30 -75 -75 -75 -75 <0.3 Max Units dB dB dB dB dB dB dB dB dB dBc dBc dBc dBc µs Return Loss Isolation RF1 – RF3 and RF2 – RF4 Isolation RF1 – RF2 Isolation RF3 – RF4 2nd Harmonic Level 0.5 – 2.5 GHz 0.5 – 1.0 GHz 1.0 – 2.0 GHz 0.5 – 1.0 GHz 1.0 – 2.0 GHz 0.5 – 1.0 GHz 1.0 – 2.0 GHz 1 GHz, P...