FMS2014QFN

Preliminary Data Sheet 2.2 FMS2014QFN High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high Tx-Rx isolation: >28dB typ. at 1.8GHz Very low Insertion loss: 0.5dB at 1.8GHz Very low control current Functional Schematic ANT V1 V2 RF1 RF2 Description and Applications: The FMS2014QFN is a low loss, high power and linear single pole double throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology, which offers excellent performance optimised for switch applications. The FMS2014QFN is designed for use in dual/tri and quad band GSM handset antenna switch modules and RF front-end modules. It can also find use in other applications where high power and linear RF switching is necessary. Electrical Specifications: Parameter Insertion Loss (TAMBIENT = 25°C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50Ω) Test Conditions 0.5 – 1.0 GHz 1.0 – 2.0 GHz Min Typ 0.45 0.5 20 -32 -30 -75 -75 -75 -75 <0.3 Max Units dB dB dB dB dB dBc dBc dBc dBc µs Return Loss Isolation 0.5 – 2.5 GHz 0.5 – 1.0 GHz 1.0 – 2.0 GHz 2nd Harmonic Level 1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 GHz, Pin = +35 dBm, 100% Duty Cycle 3rd Harmonic Level 1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 GHz, Pin = +35 dBm, 100% Duty Cycle Switching speed : Trise, Tfall Ton, Toff Co...