FMS2013

Preliminary Data Sheet 2.1 FMS2013 SPDT GaAs High Isolation Absorptive Switch DC-4 GHz Features: ♦ ♦ ♦ ♦ ♦ Available as RF Known Good Die Excellent low control voltage performance Excellent harmonic performance Very high isolation >49dB typ. up to 4GHz Very low Tx Insertion loss <1.0 dB at 4GHz Functional Schematic RF01 V2 V1 RFIN RF02 Description and Applications: The FMS2013 is a low loss, high power, linear single-pole double-throw Gallium Arsenide switch designed for general purpose applications over the frequency range DC-4GHz. The die is fabricated using the Filtronic FL05 0.5µm switch process technology which offers market leading performance optimised for switch applications. Electrical Specifications: Parameter Tx Insertion Loss Rx Insertion Loss Return Loss VSWR On State VSWR Off State Isolation at 4 GHz 2nd Harmonic Level (TOP = 25°C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50Ω) Test Conditions 4GHz 4GHz 4GHz 4GHz 4GHz 4GHz 3GHz, Pin = 21dBm, Vctrl = 3V 3GHz, Pin = 27dBm, Vctrl = 5V Min Typ 1.0 1.0 15 1:1.3 1:1.4 49 -72 -68 30 Max Units dB dB dB dB dBc dBc ns Switching speed Pin = 21dBm, 10% to 90% RF Note: External DC blocking capacitors are required on all RF ports (typ: 47pF). 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss....