FPD1050

0.75W POWER PHEMT FEATURES ♦ 28.5 dBm Linear Output Power at 12 GHz ♦ 11 dB Power Gain at 12 GHz ♦ 14 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 45% Power-Added Efficiency SOURCE BOND PAD (2x) DRAIN BOND PAD (2X) FPD1050 GATE BOND PAD (1X) DIE SIZE: 470 x 440 µm DIE THICKNESS: 100 µm BONDING PADS: >85 x 60 µm DESCRIPTION AND APPLICATIONS The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 µm by 1050 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD750 also features Si3N4 passivation and is also available in a low cost plastic SOT89 plastic package. Typical applications include commercial and other narrowband and broadband high-performance amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. ELECTRICAL SPECIFICATIONS AT 22°C Parameter Power at 1dB Gain Compression Maximum Stable Gain (S21/S12) Power Gain at P1dB Power-Added Efficiency Output Third-Order Intercept Point (from 15 to 5 dB below P1dB) Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Therm...