FPD1500DFN
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
FEATURES (1850MHZ):
• • • • • • 27 dBm Output Power (P1dB) 18 dB Smal...
FPD1500DFN
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
FEATURES (1850MHZ):
27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency RoHS compliant (Directive 2002/95/EC)
Datasheet v2.1
PACKAGE:
GENERAL DESCRIPTION:
The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility
Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm
Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels.
TYPICAL APPLICATIONS:
Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNAs WLL and WLAN systems, and other types of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS:
PARAMETER
Power at 1dB Gain Compression Small-Signal Gain
SYMBOL
P1dB SSG
CONDITIONS
VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS
MIN
TYP
27 18
MAX
UNITS
dBm dB
Power-Added Efficiency
PAE
VDS = 5 V; IDS = 50% IDSS; POUT = P1dB
45
%
Noise Figure Output Third-Order Intercept Point (from 15 to 5 dB below P1dB)
NF IP3
VDS = 5 V; IDS = 50% IDSS VDS = 5V; IDS = 50% IDSS Matched for optimal power Matched for best IP3
1.2
dB
40 42 375 465 750 400 1 0.7 12 12 0.9 16 16 15 1.3 550
dBm
Saturated Drain-Source Current Maximum Dra...