IRF4905LPBF

PD - 97034 IRF4905SPbF IRF4905LPbF Features O O O O O O HEXFET® Power MOSFET D O Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free VDSS = -55V RDS(on) = 20mΩ G S ID = -42A D Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. D G D S G D S D2Pak IRF4905SPbF G D TO-262 IRF4905LPbF S Absolute Maximum Ratings Parameter Gate Drain Max. -70 -44 -42 -280 170 1.3 ± 20 Source Units A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current ™ PD @TC = 25°C Power Dissipation Linear Derating Factor VGS EAS (Tested ) IAR EAR TJ TSTG Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Avalanche Current W W/°C V mJ A mJ d Single Pulse Avalanche Energy Tested Value Ù h 140 790 See Fig.12a, 12b, 15, 16 -55 to + 150 Repetitive Avalanche Energy Operating Junction and Storage Temperature Range g i °C 300 (1.6mm from case ) 10 lbf in (1.1N m) Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or ...