NJ01

F-2 01/99 NJ01 Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the NJ01 Process. Datasheet 2N4117, 2N4117A 2N4118, 2N4118A 2N4119, 2N4119A IFN421, IFN422 IFN423, IFN424 IFN425, IFN426 Datasheet DPAD1, DPAD2 DPAD5, DPAD10 PAD1, PAD2 PAD5 VCR7N www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance NJ01 Process Min V(BR)GSS IGSS VGS(OFF) IDSS – 0.5 0.03 – 40 Typ – 50 – 0.5 – 10 –6 0.6 Max Unit V pA V mA Test Conditions IG = – 1 µA, VDS = ØV VGS = – 20V, VDS = ØV VDS = 10V, ID = 1 µA VDS = 10V, VGS = ØV gfs Ciss 175 2 0.9 µS pF pF VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV f = 1 kHz f = 1 MHz f = 1 MHz Common Source Input Capacitance Common Source Reverse Transfer Capacitance Crss 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-3 NJ01 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.1 V Gfs as a Function...