NJ16

F-6 01/99 NJ16 Process Silicon Junction Field-Effect Transistor ¥ Low Current Switch ¥ General Purpose Amplifier ¥ High Breakdown Voltage Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.017" X 0.017" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the NJ16 Process. Datasheet 2N3954, 2N3955 2N3956 2N3957, 2N3958 2N4220, 2N4220A 2N4221, 2N4221A 2N4338, 2N4339 2N4340, 2N4341 2N4867, 2N4867A 2N4868, 2N4868A www.DataSheet4U.com 2N4869, 2N4869A Datasheet 2SK17, 2SK40 2SK59, 2SK105 IFN17, IFN40 IFN59, IFN105 J201, J202 J203, J204 J230, J231 J232 J500, J501 J502, J503 Datasheet J504, J505 J506, J507 J508, J509 J510, J511 J553, J554 J555, J556 J557 U553, U554 U555, U556 U557 VCR4N At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss e ¯N 2.2 3.5 1.2 6 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 0.2 – 0.8 Min – 50 Typ – 60 – 10 – 100 9 – 5.5 Max Unit V pA mA V NJ16 Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 30V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV f = 1 kHz f = 1 MHz f = 1 MHz f ...