NJ132L

F-34 01/99 NJ132L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.022" X 0.022" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the NJ132L Process. Datasheet 2N6451, 2N6452 2N6453, 2N6454 IF1320 IFN152 2SK152 www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage (pulsed) gfs gfs Ciss Ciss e ¯N 15 15 15 3.5 1 mS mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 – 0.5 Min – 15 Typ – 25 – 50 – 100 100 –7 Max Unit V nA mA V NJ132L Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 10V, VDS = ØV VDS = 10V, VGS = ØV VDS = 10V, ID = 1 nA VDS = 10V, VGS = ØV VDS = 10V, ID = 5 mA VDS = 10V, VGS = ØV VDS = ØV, VGS = – 10V f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDS = 4V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-35 NJ132L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.5 V Drain Current as a Function of VGS(OFF) 10 IDSS = 8 mA 50 VGS = Ø V Drain Curr...