F-10
01/99
NJ26A Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is a...
