NJ36D

F-22 01/99 NJ36D Process Silicon Junction Field-Effect Transistor ¥ Monolithic Dual Construction ¥ High Frequency Amplifier ¥ Low-Noise Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S D G Die Size = 0.026" X 0.026" All Bond Pads = 0.004" Sq. Substrate is also Gate. G D S Devices in this Databook based on the NJ36D Process. Datasheet 2N5911, 2N5912 IFN5911, IFN5912 www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage Differential Gate Source Voltage rds(on) gfs Ciss Crss e ¯N VGS1 – VGS2 NJ36D Process Min V(BR)GSS IGSS IDSS VGS(OFF) 1 – 0.5 – 25 Typ – 35 0.05 0.1 40 –8 Max Unit V nA mA V Test Conditions IG = – 1 mA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA 90 8.5 5.5 1.5 5 5 20 250 7.0 3 100 Ω mS pF pF mV ID = Ø mA, VGS = ØV VDS = 15V, VGS = ØV VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV VDG = 15V, ID = 5 mA f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDS = 15V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-23 NJ36D Process Silicon Junction Field-Effect ...