NJ30L

F-16 01/99 NJ30L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate. Devices in this Databook based on the NJ30L Process. Datasheet 2N5911, 2N5912 IFN5911, IFN5912 SMP5911 SMP5912 www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss e ¯N 8 5 1.5 2.5 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 2 – 0.5 Min – 25 Typ – 30 – 10 – 100 40 –6 Max Unit V pA mA V NJ30L Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDS = 10V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-17 NJ30L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.5 V Gfs as a Function of VGS(OFF) 10 Transconductance in mS 15 VGS = Ø V Drain Current in mA 12 V...