NJ450

F-36 01/99 NJ450 Process Silicon Junction Field-Effect Transistor ¥ LOW R(on) Switch ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S-D G Devices in this Databook based on the NJ450 Process. Datasheet 2SK363 IFN146, IFN147 IFN363 J108, J109 J110, J110A G Die Size = 0.028" X 0.028" All Bond Pads = 0.004" Sq. Substrate is also Gate. S-D www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Forward Transconductance Input Capacitance Feedback Capacitance rds(on) gfs Ciss Crss 7 250 20 10 Ω mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 – 0.1 Min – 25 Typ – 30 – 50 – 1000 600 – 10 Max Unit V pA mA V NJ450 Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA ID = 1 mA, VGS = ØV VDS = 15V, VGS = ØV VDS = ØV, VGS = – 10V VDS = ØV, VGS = – 10V f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-37 NJ450 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð4.5 V Gfs as a Function of VGS(OFF) 450 Transconductance in mS 300 VGS = Ø V Drain Current in mA 250...