NJ903

F-40 01/99 NJ903 Process Silicon Junction Field-Effect Transistor ¥ Analog Switch ¥ Digital Switch ¥ Low-Noise Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S-D G D-S Devices in this Databook based on the NJ903 Process. S-D Datasheet IFN5432 IFN5433 IFN5434 G Die Size = 0.040" X 0.040" All Bond Pads = 0.004" Sq. Substrate is also Gate. D-S www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Input Capacitance Feedback Capacitance Turn On Delay Time Rise Time Turn Off Delay Time Fall Time rds(on) Ciss Ciss td(on) tr td(off) tf 5 45 22 7 1 12 2 Ω pF pF ns ns ns ns V(BR)GSS IGSS IDSS VGS(OFF) 100 –2 Min – 25 Typ – 40 – 0.1 –1 900 –7 Max Unit V nA mA V NJ903 Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 10V, VGS = ØV VDS = 10V, ID = 1 nA ID = 1 mA, VGS = Ø VDS = ØV, VGS = – 10V VDS = ØV, VGS = – 10V VDD = 1.5V, ID(ON) = 30 mA RL = 50 Ω, VGS(ON) = ØV VGS(OFF) = – 7V f = 1 kHz f = 1 MHz f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-41 NJ903 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð4.2 V Typical Gate Lea...