PJ99

F-30 01/99 PJ99 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ Analog Switch Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.021" X 0.021" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the PJ99 Process. Datasheet 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 2SJ44 IFN5114, IFN5115 IFN5116 Datasheet IFP44 J174, J175 J176, J177 P1086, P1087 VCR3P www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage Turn On Delay Time Rise Time Turn Off Delay Time Fall Time rds(on) gfs Ciss Ciss e ¯N td(on) tr td(off) tf 75 15 18 4.5 8 5 10 6 5 Ω mS pF pF ns ns ns ns V(BR)GSS IGSS IDSS VGS(OFF) –5 1 Min 30 Typ 40 0.5 1 – 60 8 Max Unit V nA mA V PJ99 Process Test Conditions IG = 1 µA, VDS = ØV VGS = 20V, VDS = ØV VDS = – 15V, VGS = ØV VDS = – 15V, ID = 1 nA ID = 1 mA, VGS = ØV VDS = – 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = ØV, VGS = 10V f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDS = – 10V, VGS = ØV VDD = – 10V, ID(ON) = – 15 mA RL = 580 Ω, VGS(ON) = ØV VGS(OFF) = 12V 1000 N....