Document
SPA-2318
Product Description
Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960 and 2140 MHz bands. Its high linearity makes it an ideal choice for multi-carrier and digital applications.
SPA-2318Z
& Green Package Preliminary
Pb
RoHS Compliant
1700-2200 MHz 1 Watt Power Amp with Active Bias
Product Features
The matte tin finish on Sirenza’s lead-free package utilizes a post • Now available in Lead Free, RoHS annealing process to mitigate tin whisker formation and is RoHS Compliant, & Green Packaging compliant per EU Directive 2002/95. This package is also manu- • High Linearity Performance: factured with green molding compounds that contain no antimony +21 dBm IS-95 Channel Pwr at -55 dBc ACP trioxide nor halogenated fire retardants. +20.7 dBm W-CDMA Channel Pwr at -50dBc ACP
VC1 VBIAS RFIN
www.DataSheet4U.com
Active Bias
RFOUT/ VC2
+47 dBm Typ. OIP3 • On-chip Active Bias Control • High Gain: 24 dB Typ. at 1960 MHz • Patented High Reliability GaAsHBT Technology • Surface-Mountable Plastic Package
Applications
• W-CDMA Systems • PCS Systems • Multi-Carrier Applications
VPC2
Symbol f0 P 1dB
Parameters: Test Conditions: Z0 = 50 Ohms Temp = 25 ºC, Vcc = 5.0V Frequency of Operation Output Power at 1dB Compression[1] Adjacent Channel Power [1] IS-95 @ P OUT = 21.0 dBm W-CDMA @ P OUT = 20.7 dBm Small Signal Gain Input VSWR
[1,2] [1,2]
Units MHz f = 1960 MHz f = 2140 MHz f = 1960 MHz f = 2140 MHz f = 1960 MHz f = 2140 MHz f = 1960 MHz f = 2140 MHz dBm
Min. 1700
Typ.
Max. 2200
29.5 29.5 -55.0 -50.0 22.5 24.0 23.5 1.6:1 1.6:1 46.5 47.0 5.5 5.5 360
4.75
ACP
dBc
-47.0 25.0
S 21 VSWR OIP 3 NF
dB dBm dB
Output Third Order Intercept Point Power out per tone = +14dBm Noise Figure
[1,2]
[2]
f = 1960 MHz f = 2140 MHz f = 1960 MHz f = 2140 MHz Ibias = 10 mA Ic1 = 70 mA Ic2 = 320 mA
ICC V CC Rth j-l
Device Current Device Voltage
[1,2]
mA
400
5.0
425
5.25
[1,2]
V
ºC/W
Thermal Resistance (junction - lead), TL = 85ºC
31
[1] Optimal ACP tune
[2] Optimal IP3 tune
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 1
http://www.sirenza.com
EDS-101432 Rev H
SPA-2318 1700-2200 MHz 1 Watt Power Amp.
ACP Optimized 1960 MHz Application Circuit Data, Icc=400mA, Vcc=5V IS-95, 9 Channels Forward
1960 MHz Adjacent Channel Power vs. Channel Output Power
-40 -45 -50
dBc
-55 -60 -65 -70 -75 16 18 20 dBm 22 24
25C -40C 85C
IS-95 CDMA at 1960 MHz
T=25oC
23.75
24 dBm
21 dBm 17 dBm
13 dBm
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 2
http://www.sirenza.com
EDS-101432 Rev H
SPA-2318 1700-2200 MHz 1 Watt Power Amp.
ACP Optimized 1960 MHz Application Circuit Data, Icc=400mA, Vcc=5V
P1dB vs Frequency
31 30 29
24 30 27
Gain vs. Frequency
dBm
28 27
25C
dB
21
25C
26 25 1.93
85C -40C
18 15 1.93
85C -40C
1.94
1.95
1.96
1.97
1.98
1.99
1.94
1.95
1.96
1.97
1.98
1.99
GHz
GHz
Input/Output Return Loss, Isolation vs Frequency, T=25° C
0 -5 -10 -15
Device Current vs. Source Voltage
600 500
Device Current (mA)
25C -4 0 C 85C
400 300 200 100 0
dB
-20 -25 -30 -35 -40 1.93
S11 S12 S22
1.94
1.95
1.96
1.97
1.98
1.99
0
1
2
3
4
5
6
GHz
Vcc (V)
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 3
http://www.sirenza.com
EDS-101432 Rev H
SPA-2318 1700-2200 MHz 1 Watt Power Amp.
1930 - 1990 MHz Schematic
Vcc 10uF Tantalum External Connection 68pF
Z=63 Ω , 7.3°
1000pF Ic1 8.2pF
Ic2
1.2nH 18nH 1.0pF
1 8 7 6 5
20 nH 20pF
Z=50 Ω , 13.2°
6.8K Ibias 1.5pF(IP3) 2.2pF(ACP) 300 Ohm
2 3 4
2.2pF
1200pF
Tune for optimal ACP performance
Vpc
1930 - 1990 MHz Evaluation Board Layout
Vcc
C5
Ref. Des. C1 C2 Value 1.5pF, ±0.25pF (IP3) 2.2pF, ±0.25pF (ACP) 1200pF, 5% 1.0pF, ±0.25pF 68pF, 5% 10uF, 10% 1000pF, 5% 8.2pF, ±0.5pF 2.2pF, ±0.25pF 20pF, 5% 1.2nH, ±0.3nH 18nH, 5% 20nH, 5% 6.8K Ohm, 5% 300 Ohm, 5% Part Number Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series R.