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SPA-2318Z Dataheets PDF



Part Number SPA-2318Z
Manufacturers Sirenza Microdevices
Logo Sirenza Microdevices
Description Power Amp
Datasheet SPA-2318Z DatasheetSPA-2318Z Datasheet (PDF)

SPA-2318 Product Description Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960 and 2140 MHz bands. Its hig.

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SPA-2318 Product Description Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960 and 2140 MHz bands. Its high linearity makes it an ideal choice for multi-carrier and digital applications. SPA-2318Z & Green Package Preliminary Pb RoHS Compliant 1700-2200 MHz 1 Watt Power Amp with Active Bias Product Features The matte tin finish on Sirenza’s lead-free package utilizes a post • Now available in Lead Free, RoHS annealing process to mitigate tin whisker formation and is RoHS Compliant, & Green Packaging compliant per EU Directive 2002/95. This package is also manu- • High Linearity Performance: factured with green molding compounds that contain no antimony +21 dBm IS-95 Channel Pwr at -55 dBc ACP trioxide nor halogenated fire retardants. +20.7 dBm W-CDMA Channel Pwr at -50dBc ACP VC1 VBIAS RFIN www.DataSheet4U.com Active Bias RFOUT/ VC2 +47 dBm Typ. OIP3 • On-chip Active Bias Control • High Gain: 24 dB Typ. at 1960 MHz • Patented High Reliability GaAsHBT Technology • Surface-Mountable Plastic Package Applications • W-CDMA Systems • PCS Systems • Multi-Carrier Applications VPC2 Symbol f0 P 1dB Parameters: Test Conditions: Z0 = 50 Ohms Temp = 25 ºC, Vcc = 5.0V Frequency of Operation Output Power at 1dB Compression[1] Adjacent Channel Power [1] IS-95 @ P OUT = 21.0 dBm W-CDMA @ P OUT = 20.7 dBm Small Signal Gain Input VSWR [1,2] [1,2] Units MHz f = 1960 MHz f = 2140 MHz f = 1960 MHz f = 2140 MHz f = 1960 MHz f = 2140 MHz f = 1960 MHz f = 2140 MHz dBm Min. 1700 Typ. Max. 2200 29.5 29.5 -55.0 -50.0 22.5 24.0 23.5 1.6:1 1.6:1 46.5 47.0 5.5 5.5 360 4.75 ACP dBc -47.0 25.0 S 21 VSWR OIP 3 NF dB dBm dB Output Third Order Intercept Point Power out per tone = +14dBm Noise Figure [1,2] [2] f = 1960 MHz f = 2140 MHz f = 1960 MHz f = 2140 MHz Ibias = 10 mA Ic1 = 70 mA Ic2 = 320 mA ICC V CC Rth j-l Device Current Device Voltage [1,2] mA 400 5.0 425 5.25 [1,2] V ºC/W Thermal Resistance (junction - lead), TL = 85ºC 31 [1] Optimal ACP tune [2] Optimal IP3 tune The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101432 Rev H SPA-2318 1700-2200 MHz 1 Watt Power Amp. ACP Optimized 1960 MHz Application Circuit Data, Icc=400mA, Vcc=5V IS-95, 9 Channels Forward 1960 MHz Adjacent Channel Power vs. Channel Output Power -40 -45 -50 dBc -55 -60 -65 -70 -75 16 18 20 dBm 22 24 25C -40C 85C IS-95 CDMA at 1960 MHz T=25oC 23.75 24 dBm 21 dBm 17 dBm 13 dBm 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101432 Rev H SPA-2318 1700-2200 MHz 1 Watt Power Amp. ACP Optimized 1960 MHz Application Circuit Data, Icc=400mA, Vcc=5V P1dB vs Frequency 31 30 29 24 30 27 Gain vs. Frequency dBm 28 27 25C dB 21 25C 26 25 1.93 85C -40C 18 15 1.93 85C -40C 1.94 1.95 1.96 1.97 1.98 1.99 1.94 1.95 1.96 1.97 1.98 1.99 GHz GHz Input/Output Return Loss, Isolation vs Frequency, T=25° C 0 -5 -10 -15 Device Current vs. Source Voltage 600 500 Device Current (mA) 25C -4 0 C 85C 400 300 200 100 0 dB -20 -25 -30 -35 -40 1.93 S11 S12 S22 1.94 1.95 1.96 1.97 1.98 1.99 0 1 2 3 4 5 6 GHz Vcc (V) 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101432 Rev H SPA-2318 1700-2200 MHz 1 Watt Power Amp. 1930 - 1990 MHz Schematic Vcc 10uF Tantalum External Connection 68pF Z=63 Ω , 7.3° 1000pF Ic1 8.2pF Ic2 1.2nH 18nH 1.0pF 1 8 7 6 5 20 nH 20pF Z=50 Ω , 13.2° 6.8K Ibias 1.5pF(IP3) 2.2pF(ACP) 300 Ohm 2 3 4 2.2pF 1200pF Tune for optimal ACP performance Vpc 1930 - 1990 MHz Evaluation Board Layout Vcc C5 Ref. Des. C1 C2 Value 1.5pF, ±0.25pF (IP3) 2.2pF, ±0.25pF (ACP) 1200pF, 5% 1.0pF, ±0.25pF 68pF, 5% 10uF, 10% 1000pF, 5% 8.2pF, ±0.5pF 2.2pF, ±0.25pF 20pF, 5% 1.2nH, ±0.3nH 18nH, 5% 20nH, 5% 6.8K Ohm, 5% 300 Ohm, 5% Part Number Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series R.


SPA-2318 SPA-2318Z SPB-2026Z


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