Low Noise High Linearity pHEMT GaAs FET
Preliminary
SPF-2000
Product Description
Sirenza Microdevices’ SPF-2000 is a high linearity, low noise 0.25µm pHEMT. Th...
Description
Preliminary
SPF-2000
Product Description
Sirenza Microdevices’ SPF-2000 is a high linearity, low noise 0.25µm pHEMT. This 300µm device is ideally biased at 3V,20mA for lowest noise performance. At 5V,40mA the device delivers excellent output TOI of 32 dBm. It provides ideal performance as driver stages in many commercial, industrial and military LNA applications.
Low Noise High Linearity pHEMT GaAs FET
0.1 - 12 GHz Operation
Typical Gain Performance
30 25 20
Gmax 3V, 20mA 5V, 40mA
Gain, Gmax (dB)
Product Features 15 dB Gmax at 12GHz 1.25 dB FMIN at 12 GHz +32 dBm Output IP3 at 12GHz +20 dBm Output Power at 1dB Compression Applications High IP3 LNA for VSAT, LMDS, Cellular Systems
and Instrumentation Broadband Amplifiers
15 10
Gain
5 0 0 5 10 15 Frequency (GHz) 20 25 30
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Sym bol
D e v ic e C h a r a c t e r is tic s :
V d s = 3 V , Id s = 2 0 m A , T = (u n le s s o th e r w is e n o te d )
T e s t C o n d it io n s ,
2 5 °C
Tes t F re q u e n c y
1 .9 G H z 4 .0 G H z 1 2 .0 G H z 1 .9 G H z 2 .0 G H z 4 .0 G H z 1 2 .0 G H z 2 .0 G H z 2 .0 G H z 1 2 .0 G H z 1 2 .0 G H z 2 .0 G H z 2 .0 G H z 1 2 .0 G H z 1 2 .0 G H z 2 .0 G H z 2 .0 G H z 1 2 .0 G H z 1 2 .0 G H z
U n it s
M in .
Ty p .
M ax.
Gm ax
M a x i m u m A v a i la b le G a i n
[2 ]
ZS = Z S *, Z L = ZL*
dB dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm mA
21 13 16 30 -1 .5 -
25 23 15 18 0 .5 0 .6 1 .2 2 0 .0 1 5 .0 21 18 1 7 .7 1 7 .0 1 3 ....
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