SENSITRON SEMICONDUCTOR
TECHNICAL DATA Data Sheet 4098, Rev. D
SPM6G080-060D
Three-Phase IGBT BRIDGE, With Gate Driver...
SENSITRON SEMICONDUCTOR
TECHNICAL DATA Data Sheet 4098, Rev. D
SPM6G080-060D
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V
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BVCES TC = 25 OC TC = 90 C ICM VGE IGES ICES
O
600
-
-
V
IC
-
-
80 70
A
-
-
170 +/-20 +/- 100
A V nA
Zero Gate Voltage Collector Current VCE = 600 V, VGE=0V Ti=25oC VCE = 480 V, VGE=0V Ti=125oC Collector to Emitter Saturation Voltage, IC = 60A, VGE = 15V, Maximum Thermal Resistance TC = 25 C
O
1 10 VCE(SAT) 1.7 2.0
mA mA V
RθJC
-
-
0.45
o
C/W
Brake IGBT SPECIFICATIONS
Continuous Collector Current Pulsed Collector Current, 0.5mS TC = 25 OC TC = 90 C ICM O
IC
-
-
40 25 120
A
A
Brake Resistor SPECIFICATIONS
Maximum Continuous power dissipation Impulse Energy Maximum operating Junction Temperature Maximum Storage Junction Temperature Tjmax Tjmax -40 -55 Pd 2 80 150 150 watt Joules
o
C C
o
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