SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4099, REV D
SPM6G080-120D
Three-Phase IGBT BRIDGE, With Gate Driver a...
SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4099, REV D
SPM6G080-120D
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V
www.DataSheet4U.com
BVCES TC = 25 OC TC = 90 C ICM VGE IGES V
GE(TH) O
1200
-
-
V
IC
-
-
80 70
A
3.0 -
-
200 +/-20 +/- 100 6.0
A V nA V
Gate Threshold Voltage, IC=2mA Zero Gate Voltage Collector Current VCE = 1200 V, VGE=0V Ti=25oC VCE = 900 V, VGE=0V Ti=125oC Collector to Emitter Saturation Voltage, IC = 60A, VGE = 15V, Maximum Thermal Resistance TC = 25 OC
ICES
1 10 VCE(SAT) 2.5 2.8
mA mA V
RθJC
-
-
0.3
o
C/W
Brake IGBT SPECIFICATIONS
Continuous Collector Current Pulsed Collector Current, 0.5mS TC = 25 OC TC = 90 C ICM O
IC
-
-
40 25 120
A
A
221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 World Wide Web Site - http://www.sensitron.com E-mail Address -
[email protected]
1
SPM6G080-120D
SENSITRON TECHNICAL DATA DATASHEET 4099, REV D
OVER-TEMPERATURE SHUTDOWN
Over-Temperature Shutdown Over-Temperature Shutdown Hysteresis Over-Temperature Output Tco Tsd 100 110 20 10 120
o
C C
o
1...
