SPM6M050-010D

SPM6M050-010D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1161, REV. PRELIMINARY A Three-Phase MOSFET BRIDGE, 100 VOLT, 50 AMP ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) MOSFET Characteristics CHARACTERISTIC Continuous Drain Current Maximum Pulsed Drain Current Drain-to-Source www.DataSheet4U.com Breakdown Voltage Gate-Source Threshold Voltage Static Drain-to-Source On Resistance Drain-to-Source Leakage Current Turn-on Delay Rise Time Turn-off Delay Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Operating and Storage Junction Temperature SYMBOL ID IDM V(BR)DSS VGS(th) RDS IDSS td(on) tr td(off) tf Ciss Coss Crss Rthjc Tj TEST CONDITIONS VGS=10V, TC = 25 C TC = 80 oC TC = 25 oC Tj=25 oC, VGS=0V, ID=500µA VDS = VGS, Tj=25 oC ID = 500 µA VGS = 10 V, ID = 40 A VGS=0V, VDS=100V, Tj=25oC V ID = 50 A, VGS = 10 V, Tj=25oC, RG = 5Ω , VDD = 30V VDS = 25 V, VGS = 0 V, f = 1 MHz o MIN. 100 1.0 - TYP. 0.013 25 150 60 120 3.8 0.90 0.30 0.7 - MAX. 50 50 150 3.0 0.018 250 UNIT A A V V Ω µA ns - - nF - -40 1 150 o C/W o C Source Drain Diode Characteristics CHARACTERISTIC Forward Voltage Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS Tj=25 oC, IF = 30A Tj = 25 oC, IS = 30 A, di/dt = 100 A/ µs MIN. TYP. 0.80 90 MAX. 1.1 130 UNIT V ns 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 World Wide Web Site - http://www.sensitron.com E-mail Addre...