SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATA SHEET 4096, Rev A
SPM6M060-010D
Three-Phase MOSFET Bridge, With Gate Drive...
SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATA SHEET 4096, Rev A
SPM6M060-010D
Three-Phase MOSFET Bridge, With Gate Driver and Optical Isolation
DESCRIPTION: A 100 VOLT, 60 AMP, THREE PHASE MOSFET BRIDGE
ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED)
PARAMETER MOSFET SPECIFICATIONS Drain to Source Breakdown Voltage IC = 250 µA, VGS = 0V Continuous Drain Current Pulsed Drain Current, 1mS
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SYMBOL
MIN
TYP
MA X
UNIT
BVCSS TC = 25 OC TC = 90 C IDM VGS IGSS V
GS(TH) O
100
-
V
ID
-
-
60 50 100
A
A V nA V
Gate to Source Voltage Gate-Source Leakage Current , VGS = +/-20V Gate Threshold Voltage, IC=1mA Zero Gate Voltage Drain Current VCS = 600 V, VGE=0V Ti=25oC VCS= 480 V, VGE=0V Ti=125oC On-State Resistance, ID = 10A, VGS = 15V, Input Capacitance Output Capacitance Reverse Transfer Cap. VCS = 25 V, VGE = 0 V, f = 1 MHz Maximum Thermal Resistance TC = 25 C
O
-
-
+/-20 +/- 100
2 -
4
ICSS
250 500 RDSon Ciss Coss Cres RθJC 0.012 3950 850 250 0.7
o
µA µA V pF
0.015
C/W
221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX 631 242 9798 World Wide Web Site - http://www.sensitron.com E-mail Address -
[email protected]
SPM6M060-010D
SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4096, Rev A
Gate Driver PARAMETER Supply Voltage Input On Current Opto-Isolator Logic High Input Threshold Input Reverse Breakdown Voltage Input Forward Voltage @ Iin = 5mA Under Voltage Lockout ITRIP Threshol...