SENSITRON SEMICONDUCTOR
TECHNICAL DATA Datasheet 4118, Rev. C
SPM6M080-010D
Three-Phase MOSFET BRIDGE, With Gate Drive...
SENSITRON SEMICONDUCTOR
TECHNICAL DATA Datasheet 4118, Rev. C
SPM6M080-010D
Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE
ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT
PARAMETER
MOSFET SPECIFICATIONS
Drain-to-Source Breakdown Voltage ID = 500 µA, VGS = 0V Continuous Drain Current TC = 25 OC
O
BVDSS ID IDM VGS IGSS ICSS
100 -
-
80 70 200 +/-20 +/- 200
V A A V nA
TC = 90 C Pulsed Drain Current, Pulse Width limited to 1 msec Gate to Source Voltage Gate- Source Leakage Current , VGE = +/-20V
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Zero Gate Voltage Drain Current VDS = 100 V, VGS=0V Ti=25oC VDS= 80 V, VGS=0V Ti=125oC Static Drain-to-Source On Resistance, ID= 60A, VGS = 15V, Maximum Thermal Resistance Maximum operating Junction Temperature Maximum Storage Junction Temperature Tj = 25 C Tj = 150 C
O O
1 3 RDSon 0.009 0.018 RθJC Tjmax Tjmax -40 -55 0.012 0.65 150 150
o
mA mA V
C/W
o o
C C
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SPM6M080-010D SENSITRON TECHNICAL DATA Datasheet 4118, Rev. C
Over-Temperature Shutdown
Over-Temperature Shutdown Over-Temperature Output Over-Temperature Shutdown Hysteresis Tsd Tso 105 110 10 20 115
o
C
10mV/oC
o
C
DIODES CHARACTERISTICS
Continuous Source Current, TC = 90 OC...
