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SUF-5000 Dataheets PDF



Part Number SUF-5000
Manufacturers Sirenza Microdevices
Logo Sirenza Microdevices
Description Cascadable pHEMT MMIC Amplifier
Datasheet SUF-5000 DatasheetSUF-5000 Datasheet (PDF)

Preliminary SUF-5000 Product Description Sirenza Microdevices’ SUF-5000 is a monolithically matched broadband high IP3 gain block covering 0.1 - 3.7 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. It offers efficient, cascadable performance in a compact 0.88 x 0.86 mm2 die. It is well-suited for RF, LO, and IF driver applications. 0.1-3.7 GHz, Cascadable pH.

  SUF-5000   SUF-5000


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Preliminary SUF-5000 Product Description Sirenza Microdevices’ SUF-5000 is a monolithically matched broadband high IP3 gain block covering 0.1 - 3.7 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. It offers efficient, cascadable performance in a compact 0.88 x 0.86 mm2 die. It is well-suited for RF, LO, and IF driver applications. 0.1-3.7 GHz, Cascadable pHEMT MMIC Amplifier Product Features • • • • • • • • Return Loss (dB) Gain & Return Loss vs. Frequency (GSG Probe Data) 24 22 20 18 16 14 12 0 1 2 Frequency (Ghz) 3 4 GAIN ORL IRL 0 -5 -10 -15 -20 -25 -30 Broadband Performance High Gain = 19.0 dB @ 2 GHz P1dB = 22 dBm @ 2 GHz Low-noise, Efficient Gain Block 5V Operation, No Dropping Resistor Low Gain Variation vs. Temperature Patented Thermal Design Patented Self-Bias Darlington Circuit Gain (dB) Applications • • • • • Broadband Communications Test Instrumentation Military & Space LO and IF Mixer Applications High IP3 RF Driver Applications Symbol www.DataSheet4U.com Parameters Units Frequency Min. Typ. Max. Gp P1dB OIP3 NF IRL ORL Isol VD ID ΔG/ΔT Rth, j-l Small Signal Power Gain Output Power at 1dB Compression Output Third Order Intercept Point Noise Figure Input Return Loss Output Return Loss Reverse Isolation Device Operating Voltage Device Operating Current Gain Variation vs.Temperature Thermal Resistance (junction to backside) dB dBm dBm dB dB dB dB V mA dB/°C °C/W 2 GHz 4 GHz 2 GHz 4 GHz 2 GHz 4 GHz 2 GHz 4 GHz 2 GHz 4 GHz 2 GHz 4 GHz 2 GHz 4 GHz 19.0 17.0 22.0 22.0 34.5 34.5 3.2 3.6 -19.0 -15.0 -13.0 -12.0 -24.0 -23.0 5.0 90 -0.01 133 Test Conditions: VS = 5.0V, ID = 90mA OIP3 =80 1MHz, Pout per tone = 0 dBm VS = 5 VTone Spacing ID = mA Typ. OIP Tone Spacing = 1 MHz, Pout per tone = 0 dBm Test Conditions: 3 T = 25ºC Z = Z = 50 Ohms Measured with Bias Tees ZS = ZL = 50 Ohms,L 25C, GSG Probe Data With Bias Tees S L The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-105419 Rev B Preliminary SUF-5000 0.1-3.7 GHz Cascadable MMIC Amplifier Typical Performance (GSG Probe Data) S21 vs. Frequency 24 22 20 21.0 25.0 P1dB vs. Frequency 23.0 18 16 14 12 0 1 2 Frequency (GHz) 3 4 0C 25C 85C dBm dB 19.0 25C 0C 85C 17.0 15.0 0 1 2 Frequency (GHz) 3 4 S11 vs. Frequency 0 -5 -10 dB -15 -20 -25 -30 0 1 2 Frequency (GHz) 3 4 0C 25C 85C S22 vs. Frequency 0 -5 -10 dB -15 -20 -25 -30 0 1 2 Frequency (GHz) 3 4 0C 25C 85C OIP3 vs. Frequency 38 Noise Figure vs. Frequency 7 6 36 5 34 dBm dB 32 25C 30 -20C 85C 28 0 1 2 Frequency (GHz) 3 4 4 3 2 1 0 0 1 2 Frequency (GHz) 3 4 25C -20C 85C 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-105419 Rev B Preliminary SUF-5000 0.1-3.7 GHz Cascadable MMIC Amplifier Typical Performance (GSG Probe Data) Freq (GHz) 0.10 0.50 0.85 2.0 4.0 6.0 10.0 Test Conditions: VD (V) 5 5 5 5 5 5 5 Current (mA) 90 90 90 90 90 90 90 Gain (dB) 20.5 20.0 20.0 19.0 17.0 14.0 9.0 P1dB (dBm) OIP3 (dBm) S11 (dB) -20.5 -21.0 -20.5 -19.0 -15.0 -13.0 -12.5 S22 (dB) -15.0 -15.0 -15.0 -13.0 -12.0 -12.0 -11.0 NF (dB) 22.0 22.0 22.0 21.0 18.5 33.0 34.5 34.5 33.0 33.0 2.7 3.2 3.6 3.7 5.2 Test Conditions: GSG Probe Data With Bias Tees, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm, 25C Parameter Max Device Current (ID) Max Device Voltage (VD) Max RF Input Power Absolute Limit 100mA 5.5V 10dBm Max Dissipated Power Max Junction Temperature (TJ) Operating Temperature Range (TL) Max Storage Temp. 550mW 150C -40 to +85C -65 to +150C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l TL=Backside of die Current Variation vs. Temperature Current vs. Voltage 100 95 90 mA 85 -20C 80 75 4.75 25C 85C 4.80 4.85 4.90 4.95 5.00 VD 5.05 5.10 5.15 5.20 5.25 ELECTROSTATIC SENSITIVE DEVICE Appropriate precautions in handling, packaging and testing devices must be observed. 303 S. Technology Ct. Broomfield, CO 80021 .


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