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SXA-389B Dataheets PDF



Part Number SXA-389B
Manufacturers Sirenza Microdevices
Logo Sirenza Microdevices
Description Medium Power GaAs HBT Amplifier
Datasheet SXA-389B DatasheetSXA-389B Datasheet (PDF)

Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, WCDMA ap.

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Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. SXA-389B SXA-389BZ Pb RoHS Compliant & Green Package 400-2500 MHz ¼ W Medium Power GaAs HBT Amplifier with Active Bias Product Features • Now Available in Leed Free, RoHS Compliant, & Green Packaging • Lower Rth for increased MTTF 108 hrs. at TLead = 85°C • On-chip Active Bias Control, Single 5V Supply • Excellent Linearity: +43 dBm typ. OIP3 at 1960 MHz • High P1dB : +25 dBm typ. • High Gain: +18.5 dB at 850 MHz • Efficient: consumes only 575 mW Typical OIP3, P1dB, Gain 50 45 40 35 30 25 20 15 10 5 0 850 MHz 1960 MHz 2140 MHz OIP3 P1dB Gain dBm Applications 2450 MHz • W-CDMA, PCS, Cellular Systems • Multi-Carrier Applications www.DataSheet4U.com Symbol Parameters: Test C onditions: Z0 = 50 Ohms, Ta = 25°C f f f f f f f f f f f f f f f f f f f f = = = = = = = = = = = = = = = = = = = = 850 MHz 1960 MHz 2140 MHz 2450 MHz 850 MHz 1960 MHz 2140 MHz 2450 MHz 850 MHz 1960 MHz 2140 MHz 2450 MHz 850 MHz 1960 MHz 2140 MHz 2450 MHz 850 MHz 1960 MHz 2140 MHz 2450 MHz U nits Min. Typ. 25 25 25 25 18.4 13.6 13.5 12.8 1.2:1 1.3:1 1.2:1 1.2:1 41 43 42 41 4.5 4.8 5.0 5.7 Max. P 1dB Output Power at 1dB C ompressi on dB m 24 S 21 Small si gnal gai n dB 12.5 15 S11 Input VSWR - 2.0:1 OIP3 Output Thi rd Order Intercept Poi nt (Pout/Tone = +11 dBm, Tone spaci ng = 1 MHz) dB m 39 NF Noi se Fi gure dB 6.3 ID PDISS Rth, j-l D evi ce C urrent Operati ng D i ssi pated Power Thermal Resi stance (juncti on - lead) V cc = 5 V mA mW ° C /W 90 115 575 70 135 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-102915 Rev D 1 SXA-389B ¼ W GaAs HBT Amplifier Note: Tuned for Output IP3 850 MHz Application Circuit Data, VCC= 5V, ID= 115mA P1dB vs. Frequency 30 28 26 24 25C 22 20 0.8 0.85 GHz dB Gain vs. Frequency 20 18 16 14 85C -40C dBm 12 10 25C 85C -40 C 0.9 0.95 0.8 0.85 GHz 0.9 0 .9 5 Input/Output Return Loss, Isolation vs. Frequency, T=25°C 0 -5 -10 -15 -20 -25 -30 -35 -40 0 .8 0.8 5 GHz dBm dB Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 45 43 41 39 S 11 S 12 S 22 37 35 25 C 85 C -4 0C 0.9 0 .9 5 0 .8 0.8 5 GHz 0.9 0 .95 45 43 41 39 37 35 0 Third Order Intercept vs. Tone Power Frequency = 850 MHz -4 0 Adjacent Channel Power (dBc) 880 MHz Adjacent Channel Power vs. Channel Output Power -4 5 -5 0 -5 5 -6 0 -6 5 -7 0 -7 5 25C 85C -4 0 C 10 12 14 16 18 20 25C 85C -40C dBm 2 4 6 8 10 12 14 16 18 POUT per tone (dBm) Channel Output Power (dBm) IS-95, 9 Channels Forward 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-102915 Rev D 2 SXA-389B ¼ W GaAs HBT Amplifier Note: Tuned for Output IP3 1960 MHz Application Circuit Data, VCC= 5V, ID= 115mA P1dB vs. Frequency 30 28 26 24 22 20 1 .9 3 2 5C 8 5C -40C 1 .94 1.95 1.9 6 GHz dB Gain vs. Frequency 20 18 16 14 12 10 1.93 25C 85C -40C dBm 1 .97 1.98 1.9 9 1.94 1.95 1.96 GHz 1.97 1.98 1.99 Input/Output Return Loss, Isolation vs. Frequency, T=25°C 0 -5 -10 dB Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 45 S11 S12 S22 dBm 43 41 39 -15 -20 -25 -30 1 .93 37 35 1.93 25C 85C -40C 1 .94 1.9 5 1.9 6 GHz 1.9 7 1 .9 8 1 .9 9 1.94 1.95 1.96 GHz 1.97 1.98 1.99 Third Order Intercept vs. Tone Power Frequency = 1.96 GHz 47 45 43 dBm 1960 MHz Adjacent Channel Power vs. Channel Output Power -40 Adjacent Channel Power (dBc) 25C 85C -40C -45 -50 -55 -60 -65 -70 -75 25C 85C -40C 10 12 14 16 18 20 41 39 37 35 0 2 4 6 8 10 12 14 16 18 POUT per tone (dBm) Channel Output Power (dBm) IS-95, 9 Channels Forward 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-102915 R.


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