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SXT-289 Dataheets PDF



Part Number SXT-289
Manufacturers Sirenza Microdevices
Logo Sirenza Microdevices
Description Medium Power GaAs HBT Amplifier
Datasheet SXT-289 DatasheetSXT-289 Datasheet (PDF)

Product Description Sirenza Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 1800-2500 MHz cellular, ISM, WLL and Wideband .

  SXT-289   SXT-289


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Product Description Sirenza Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 1800-2500 MHz cellular, ISM, WLL and Wideband CDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. Typical IP3, P1dB, Gain 45 40 35 30 25 20 15 10 5 0 www.DataSheet4U.com SXT-289 1800-2500 MHz Medium Power GaAs HBT Amplifier Product Features • Patented High Reliability GaAs HBT Technology • High Output 3rd Order Intercept : +42 dBm typ. • at 2450 MHz Surface-Mountable Power Plastic Package IP3 P1dB Gain Applications • Balanced Amplifier Configuration App. Note (AN-011) 1960 MHz 2140 MHz 2450 MHz • PCS Systems • WLL, Wideband CDMA Systems • ISM Systems Symbol Parameters: Test Conditions: Z0 = 50 Ohms, Ta = 25°C Output Power at 1dB Compression f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz V S = 8V RBIAS = 27 Ohms VD = 5 V typ. Units dB m dB m dB m dB dB dB dB m dB m dB m dB dB dB mA ° C/W Min. Typ. 23.5 23.5 23.0 15.0 15.0 13.8 1.4:1 1.6:1 1.6:1 Max. P 1dB 22.5 S 21 Small signal gain 13.5 16.6 S11 Input VSWR IP3 Output Third Order Intercept Point (Pout/Tone = +11 dBm, Tone spacing = 1 MHz) 37.5 41.0 40.0 42.0 4.4 4.5 5.4 NF Noise Figure ID Rth, j-l Device Current Thermal Resistance (junction - lead) 85 105 108 120 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101157 Rev G 1 SXT-289 1800-2500 MHz Power Amplifier Note: Tuned for Output IP3 1960 MHz Application Circuit Data, VS=8V, ID=105mA, RBIAS=27 Ohms P1dB vs Frequency 26 25 25C -40C 85C dB Gain vs. Frequency 20 18 16 14 12 10 1930 25C -40C 85C dBm 24 23 22 21 1930 1940 1950 1960 MHz 1970 1980 1990 1940 1950 1960 MHz 1970 1980 1990 Input/Output Return Loss, Isolation vs Frequency 0 -5 -10 -15 -20 -25 -30 -35 -40 1930 T=25oC S11 dBm 42 41 40 39 38 37 1930 Third Order Intercept vs. Frequency (POUT per tone = 11dBm) dB S22 S12 25C -40C 85C 1940 1950 1960 MHz 1970 1980 1990 1940 1950 1960 MHz 1970 1980 1990 Third Order Intercept vs Tone Power Device Current vs. Source Voltage 180 160 140 120 100 80 60 40 20 0 0 2 25C -40C 85C 42 Device Current (mA) 41 dBm 40 39 38 37 0 2 4 6 8 10 12 14 16 POUT per tone (dBm) 25C -40C 85C 4 VS (V) 6 8 10 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101157 Rev G 2 SXT-289 1800-2500 MHz Power Amplifier Note: Tuned for Output IP3 2140 MHz Application Circuit Data, VS=8V, ID=105mA, RBIAS=27 Ohms P1dB vs Frequency Gain vs. Frequency 26 25 dBm 20 25C -40C 85C dB 18 16 14 12 10 2110 25C -40C 85C 24 23 22 21 2110 2120 2130 2140 MHz 2150 2160 2170 2120 2130 2140 MHz 2150 2160 2170 Input/Output Return Loss, Isolation vs Frequency 5 0 -5 -10 -15 -20 -25 -30 -35 2110 T=25oC 45 43 dBm Third Order Intercept vs. Frequency (POUT per tone = 11dBm) dB S11 S22 S12 41 39 37 35 2110 25C -40C 85C 2120 2130 2140 MHz 2150 2160 2170 2120 2130 2140 MHz 2150 2160 2170 Third Order Intercept vs Tone Power Device Current vs. Source Voltage 45 Device Current (mA) 43 dBm 41 39 37 35 0 2 4 6 8 10 12 14 16 POUT per tone (dBm) 25C -40C 85C 180 160 140 120 100 80 60 40 20 0 0 2 25C -40C 85C 4 VS (V) 6 8 10 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101157 Rev G 3 SXT-289 1800-2500 MHz Power Amplifier Note: Tuned for Output IP3 2450 MHz Application Circuit Data, VS=8V, ID=105mA, RBIAS=27 Ohms P1dB vs Frequency Gain vs. Frequency 25C -40C 85C dB 26 25 24 dBm 20 18 16 14 12 10 2400 25C -40C 85C 23 22 21 20 2400 2420 2440 MHz 2460 2480 2500 2420 2440 2460 MHz 2480 2500 Input/Output Return Loss, Isolation vs Frequency 5 0 -5 -10 -15 -20 -25 S12 -30 -35 2400 2420 dB T=25.


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