Document
Product Description
Sirenza Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 1800-2500 MHz cellular, ISM, WLL and Wideband CDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. Typical IP3, P1dB, Gain
45 40 35 30 25 20 15 10 5 0
www.DataSheet4U.com
SXT-289
1800-2500 MHz Medium Power GaAs HBT Amplifier
Product Features • Patented High Reliability GaAs HBT Technology • High Output 3rd Order Intercept : +42 dBm typ. •
at 2450 MHz Surface-Mountable Power Plastic Package
IP3 P1dB Gain
Applications • Balanced Amplifier Configuration App. Note
(AN-011)
1960 MHz
2140 MHz
2450 MHz
• PCS Systems • WLL, Wideband CDMA Systems • ISM Systems
Symbol
Parameters: Test Conditions: Z0 = 50 Ohms, Ta = 25°C Output Power at 1dB Compression f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz V S = 8V RBIAS = 27 Ohms VD = 5 V typ.
Units dB m dB m dB m dB dB dB dB m dB m dB m dB dB dB mA ° C/W
Min.
Typ. 23.5 23.5 23.0 15.0 15.0 13.8 1.4:1 1.6:1 1.6:1
Max.
P 1dB
22.5
S 21
Small signal gain
13.5
16.6
S11
Input VSWR
IP3
Output Third Order Intercept Point (Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
37.5
41.0 40.0 42.0 4.4 4.5 5.4
NF
Noise Figure
ID Rth, j-l
Device Current Thermal Resistance (junction - lead)
85
105 108
120
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101157 Rev G
1
SXT-289 1800-2500 MHz Power Amplifier
Note: Tuned for Output IP3
1960 MHz Application Circuit Data, VS=8V, ID=105mA, RBIAS=27 Ohms
P1dB vs Frequency
26 25
25C -40C 85C
dB
Gain vs. Frequency
20 18 16 14 12 10 1930
25C -40C 85C
dBm
24 23 22 21 1930
1940
1950
1960
MHz
1970
1980
1990
1940
1950
1960
MHz
1970
1980
1990
Input/Output Return Loss, Isolation vs Frequency
0 -5 -10 -15 -20 -25 -30 -35 -40 1930
T=25oC S11
dBm
42 41 40 39 38 37 1930
Third Order Intercept vs. Frequency (POUT per tone = 11dBm)
dB
S22
S12
25C -40C 85C
1940
1950
1960
MHz
1970
1980
1990
1940
1950
1960
MHz
1970
1980
1990
Third Order Intercept vs Tone Power
Device Current vs. Source Voltage
180 160 140 120 100 80 60 40 20 0 0 2
25C -40C 85C
42
Device Current (mA)
41
dBm
40 39 38 37 0 2 4 6 8 10 12 14 16
POUT per tone (dBm)
25C -40C 85C
4
VS (V)
6
8
10
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101157 Rev G
2
SXT-289 1800-2500 MHz Power Amplifier
Note: Tuned for Output IP3
2140 MHz Application Circuit Data, VS=8V, ID=105mA, RBIAS=27 Ohms
P1dB vs Frequency Gain vs. Frequency
26 25
dBm
20
25C -40C 85C
dB
18 16 14 12 10 2110
25C -40C 85C
24 23 22 21 2110
2120
2130
2140
MHz
2150
2160
2170
2120
2130
2140
MHz
2150
2160
2170
Input/Output Return Loss, Isolation vs Frequency
5 0 -5 -10 -15 -20 -25 -30 -35 2110
T=25oC
45 43
dBm
Third Order Intercept vs. Frequency (POUT per tone = 11dBm)
dB
S11 S22 S12
41 39 37 35 2110
25C -40C 85C
2120
2130
2140
MHz
2150
2160
2170
2120
2130
2140
MHz
2150
2160
2170
Third Order Intercept vs Tone Power
Device Current vs. Source Voltage
45
Device Current (mA)
43
dBm
41 39 37 35 0 2 4 6 8 10 12 14 16
POUT per tone (dBm)
25C -40C 85C
180 160 140 120 100 80 60 40 20 0 0 2
25C -40C 85C
4
VS (V)
6
8
10
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101157 Rev G
3
SXT-289 1800-2500 MHz Power Amplifier
Note: Tuned for Output IP3
2450 MHz Application Circuit Data, VS=8V, ID=105mA, RBIAS=27 Ohms
P1dB vs Frequency Gain vs. Frequency
25C -40C 85C
dB
26 25 24
dBm
20 18 16 14 12 10 2400
25C -40C 85C
23 22 21 20 2400 2420 2440
MHz
2460
2480
2500
2420
2440
2460
MHz
2480
2500
Input/Output Return Loss, Isolation vs Frequency
5 0 -5 -10 -15 -20 -25 S12 -30 -35 2400 2420
dB
T=25.