Document
DTD543XE / DTD543XM
Transistors
500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
DTD543XE / DTD543XM
zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm)
DTD543XE
1.6 0.3
(3)
0.8 1.6
0.7 0.55
zFeature 1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 4) Only the on / off conditions need to be set for operation, making the device design easy. zStructure NPN epitaxial planar silicon transistor (Resistor built-in type)
0.2 0.5 0.5 1.0 EMT3 JEITA No. (SC-75A) JEDEC No.
0.2
0.15
0.1Min.
(2)
(1)
(1) GND (2) IN (3) OUT
Each lead has same dimensions
Addreviated symbol : X43
DTD543XM
0.2 0.8 1.2
1.2 0.32
(3)
0.2
0.22
(1)(2)
0.4 0.4 0.8
0.13 0.5
(1) IN (2) GND (3) OUT
VMT3
Each lead has same dimensions
Addreviated symbol : X43
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage Input voltage Collector current Power dissipation Junction temperature Storage temperature
∗2 ∗1
zPackaging specifications
Limits
Symbol VCC VIN IC (max) PD Tj Tstg
DTD543XE DTD543XM 12 −7 to +12 500 150 150 −55 to +150
Unit V V mA mW C
C
Part No. DTD543XE DTD543XM
Package Packaging type Code Basic ordering unit (pieces)
EMT3 Taping TL 3000
VMT3 Taping T2L 8000 −
−
∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land.
zElectrical characteristics (Ta=25°C)
Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency ∗ Input resistance Resistance ratio
∗ Characteristics of built-in transistor.
zEquivalent circuit
Max. 0.3 − 300 1.4 500 − − 6.11 2.6 Unit V mV mA µA − MHz kΩ − Conditions VCC= 5V, IO= 100µA VO= 0.3V, IO= 2mA IO/II= 100mA / 5mA VI= 5V VCC= 12V, VI=0V VO= 2V, IO= 100mA VCE= 10V, IE=−5mA, f=100MHz − −
IN GND OUT IN R2 GND R1 OUT
Symbol VI(off) VI(on) VO(on) II IO(off) GI fT R1 R2/R1
Min. − 2.5 − − − 140 − 3.29 1.7
Typ. − − 60 − − − 260 4.7 2.1
R1=4.7kΩ / R2=10kΩ
Rev.A
1/1
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to .