D2015UK

TetraFET D2015UK METAL GATE RF SILICON FET MECHANICAL DATA A B C O K H I E F J L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 500MHz SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND G (4 PLS) N D (2 PLS) M SOT 171 PIN 1 PIN 3 PIN 5 DIM A B C D E F G H I J K L M N O SOURCE GATE SOURCE mm 10.92 5.84 2.54 3.30 dia 9.14 3.05 2.01 1.04 18.42 24.77 2.74 9.14 4.19 0.13 7.11 PIN 2 PIN 4 PIN 6 Tol. 0.25 0.08 0.08 0.13 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.13 0.08 0.05 MAX SOURCE DRAIN SOURCE Tol. 0.001 0.003 0.003 0.05 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.005 0.003 0.002 MAX APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 13 dB MINIMUM Inches 0.430 0.230 0.100 0.130 dia 0.360 0.120 0.079 0.041 0.725 0.975 0.108 0.360 0.165 0.005 0.280 APPLICATIONS VHF/UHF COMMUNICATIONS from DC to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 29W 65V ±20V 2A –65 to 150°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encoura...