Document
EDZ22B
Diodes
Zener diode
EDZ22B
zApplications Constant voltage control zExternal dimensions (Unit : mm)
0.8±0.05 0.12±0.05
zLand size figure (Unit : mm)
0.8
zFeatures 1) 2-pin ultra mini-mold type for high-density mounting (EMD2). 2) High reliability. 3) Can be mounted automatically, using chip mounter.
0.3±0.05
0.6
1.2±0.05
1.6±0.1
EMD2
zStructure
0.6±0.1
zConstruction Silicon epitaxial planar
ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 Mark EX. EDZ3.6B
zTaping specifications (Unit : mm)
0.2±0.05 4.0±0.1 2.0±0.05 φ1.5±0.05
3.5±0.05
1.75±0.1
8.0±0.15
1.3±0.06 0
1.26±0.05 0 0.2 0.76±0.05
2.45±0.1
φ0.5 0.95±0.06 0 4.0±0.1 ポケット Empty poc ket 2.0±0.05
zAbsolute maximum ratings (Ta=25°C)
Parameter Power dissipation Junction temperature Storage temperature Operating temperature Symbol P Tj Tstg Topr Limits 150 150 -55 to +150 -55 to +150 Unit mW ℃ ℃ ℃
0.6
Rev.C
1.7
1/4
EDZ22B
Diodes
zElectrical characteristics (Ta=25°C) Symbol TYP. EDZ 3.6B EDZ 3.9B EDZ 4.3B EDZ 4.7B EDZ 5.1B EDZ 5.6B EDZ 6.2B EDZ 6.8B EDZ 7.5B EDZ 8.2B EDZ 9.1B EDZ 10B EDZ 11B EDZ 12B EDZ 13B EDZ 15B EDZ 16B EDZ 18B EDZ 20B EDZ 22B EDZ 24B EDZ 27B EDZ 30B EDZ 33B EDZ 36B zType No. TYPE EDZ 3.6B EDZ 3.9B EDZ 4.3B EDZ 4.7B EDZ 5.1B EDZ 5.6B EDZ 6.2B EDZ 6.8B EDZ 7.5B EDZ 8.2B EDZ 9.1B EDZ 10B EDZ 11B TYPE NO.
Zener voltage :Vz(V)
Operating resistance :Zz(Ω)
Rising operating resistance :Zz(Ω)
Reverse current : IR(uA)
MIN. 3.600 3.890 4.170 4.550 4.980 5.490 6.060 6.650 7.280 8.020 8.850 9.770 10.760 11.740 12.910 14.340 15.850 17.560 19.520 21.540 23.720 26.190 29.190 32.150 35.070
MAX. 3.845 4.160 4.430 4.750 5.200 5.730 6.330 6.930 7.600 8.360 9.230 10.210 11.220 12.240 13.490 14.980 16.510 18.350 20.390 22.470 24.780 27.530 30.690 33.790 36.870
Iz(mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 2.0 2.0 2.0 2.0
MAX. 100 100 100 100 80 60 60 40 30 30 30 30 30 30 37 42 50 65 85 100 120 150 200 250 300
Iz(mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 2.0 2.0 2.0 2.0
MAX. 1000.0 1000.0 1000.0 800.0 500.0 200.0 100.0 60.0 60.0 60.0 60.0 60.0 60.0 80.0 80.0 80.0 80.0 80.0 100.0 100.0 120.0 150.0 200.0 250.0 300.0
Iz(mA) 1.0 1.0 1.0 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5
MAX. 10.0 5.0 5.0 2.0 2.0 1.0 1.0 0.5 0.5 0.5 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1
VR(V) 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0
62 72 82 92 A2 C2 E2 F2 H2 J2 L2 05 15
TYPE EDZ 12B EDZ 13B EDZ 15B EDZ 16B EDZ 18B EDZ 20B EDZ 22B EDZ 24B EDZ 27B EDZ 30B EDZ 33B EDZ 36B
TYPE NO.
25 35 45 55 65 75 85 95 A5 C5 E5 F5
Rev.C
2/4
EDZ22B
Diodes
zElectrical characteristic curves (Ta=25°C)
10
1
ZENER CURRENT:Iz(mA)
0.1
4.7 0.01 4.3 3.9 5.6 3.6
5.1 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16
18
20 22 24 27 30 33 36
0.001 0 5 10 15 20 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 25 30 35 40
160 POWER DISSIPATION:Pd(mW) 140
10000 PRSM t
120 100 80 60 40 20 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Pd-Ta CHARACTERISTICS 0.12 0.1 40 35 30 25 20 15 10 5 0 -5 0 10 20 30 ZENER VOLTAGE:Vz(V) γz-Vz CHARACTERISTICS 40
REVERSE SURGE MAXIMUM POWER:PRSM(W)
1000
100
10
1
0.1 0.001
0.01
0.1
1
10
100
TIME:t(ms) PRSM-TIME CHARACTERISTICS 1000 Rth(j-a) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) TEMP.COEFFICIENCE:γz(mV/℃) 100
TEMP.COEFFICIENCE:γz(%/℃)
0.08 0.06 0.04 0.02 0 -0.02 -0.04 -0.06 -0.08
Rth(j-c) 10
Mounted on epoxy board IM=10mA IF=100mA
1
1ms time 300us
0.1 0.001
0.01
0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS
1000
Rev.C
3/4
EDZ22B
Diodes
10 Ta=25℃ ZENER CURRENT:Iz(mA) 1 Ta=-25℃ Ta=125℃ Ta=25℃ 0.1
Ta=-25℃ Ta=125℃
100 Ta=75℃ REVERSE CURRENT:IR(nA) 10 1 0.1 0.01 0.001 0.0001 Ta=-25℃
Ta=-25℃ Ta=125 Ta=125℃ ℃
100 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=75℃
Ta=75℃ Ta=75℃
Ta=25℃ Ta=25℃
10
0.01
0.001 19 20 21 22 23 24 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 25
0.00001 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 20
1 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20
22.2 22.1 22 21.9 AVE:21.96V 21.8 21.7
AVE:9.996V σ:0.0125V
1 REVERSE CURRENT:IR(nA)
Ta=25℃ Ta=25℃ IZ=5mA IZ=5mA n=30pcs n=30pcs
100 CAPACITANCE BETWEEN TERMINALS:Ct(pF)
VR=7.0V Ta=25℃ n=10pcs VR=17V n=30pcs Ta=25℃
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0
AVE:0.125nA σ:0.0263nA
90 80 70 60 50 40 30 20 10 0 AVE:34.42pF
ZENER VOLTAGE:Vz(V)
Ta=25℃ f=1MHz VR=0V n=10pcs
AVE:0.102nA
Vz DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
1000 DYNAMIC IMPEDANCE:Zz(Ω)
100
10
1 0.1 1 ZENER CURRENT:Iz(mA) Zz-Iz CHARACTERISTICS 10
Rev.C
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this docu.