Document
FML9
Transistors
General purpose transistor (isolated transistor and diode)
FML9
A 2SB1689 and a RB461F are housed independently in a UMT package.
zApplications DC / DC converter Motor driver
zExternal dimensions (Unit : mm)
FML9
0.95 0.95 1.9 0.8
0.3
(2)
(3)
0.3Min.
Each lead has same dimensions
zStructure Silicon epitaxial planar transistor Schottky barrier diode
ROHM : SMT5 EIAJ : SC-74A
zEquivalent circuit
(3) (4) (5)
Di2
Tr1
(2)
(1)
zPackaging specifications
Type
Package Marking Code Basic ordering unit(pieces)
FML9 SMT5 L9 TR 3000
0~0.1
zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package
(1)
1.6 2.8
0.15
(5)
(4)
1.1
2.9
Rev.A
1/4
FML9
Transistors
zAbsolute maximum ratings (Ta=25°C) Tr1
Limits Symbol −15 VCBO VCEO −12 VEBO −6 IC −1.5 Collector current ICP −3 Power dissipation Pc 200 Junction temperature Tj 150 Range of storage temperature Tstg −40 to +125 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
∗1 Single pulse, Pw=1ms. ∗2 Each terminal mounted on a recommended land.
Unit V V V A A mW °C °C
∗1 ∗2
Di2
Parameter Symbol Reak reverse voltage VRM Average rectified forward current IF Forward current surge peak (60HZ, 1∞) IFSM Reverse voltage (DC) VR Junction temperature Tj Range of storage temperature Tstg Limits 25 700 3 20 125 −40 to +125 Unit V mA A V °C °C
zElectrical characteristics (Ta=25°C) Tr1
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −12 −15 −6 − − − 270 − − Typ. − − − − − −110 − 400 12 Max. − − − −100 −100 −200 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=−1mA IC=−10µA IE=−10µA VCB=−15V VEB=−6V IC=−500mA, IB=−25mA VCE=−2V, IC=−200mA VCE=−2V, IE=200mA, f=100MHz VCB=−10V, IE=0mA, f=1MHz
Di2
Parameter Forward voltage Reverse current Symbol VF IR Min. − − Typ. − − Max. 490 200 Unit mV µA IF=700mA VR=20V Conditions
Rev.A
2/4
FML9
Transistors
zElectrical characteristic curves Tr1
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
VCE=−2V Pulsed
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATUATION VOLTAGE : VBE(sat) (V)
1000
Ta=100°C Ta=25°C Ta=−40°C
10
IC/IB=20/1 VCE=−2V Pulsed
Ta=25°C
1
Ta=25°C
Pulsed
DC CURRENT GAIN : hFE
Ta=−40°C
VBE(sat)
1
Ta=100°C
0.1
100
0.1
Ta=100°C
VCE(sat)
IC/IB=50/1
0.01
Ta=25°C Ta=−40°C
0.01
IC/IB=20/1 IC/IB=10/1
10 0.001
0.01
0.1
1
10
0.001 0.001
0.01
0.1
1
10
0.001 0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs.
Fig.2 Base-emitter saturation voltage
Fig.3 Collector-emitter saturation voltage
collector current
vs. collector current
vs. collector current
10
TRANSITION FREQUENCY : fT (MHz)
1000
10000
Ta=25°C VCE=−2V f=100MHz
SWITCHING TIME : (ns)
Ta=25°C
COLLECTOR CURRENT : IC (A)
VCE=−2V Pulsed
VCE=−5V f=100MHz
1000
1
0.1
Ta=100°C
Ta=25°C
100
100
tstg tf
Ta=−40°C
0.01
10
tdon tr
0.001
0
0.5
1
1.5
10 0.001
0.01
0.1
1
10
1 0.001
0.01
0.1
1
10
BASE TO EMITTER CURRENT : VBE(on) (V)
EMITTER CURRENT : IE (A)
COLLECTOR CURRENT : IC (A)
Fig.4 Grounded emitter propagation
Fig.5 Gain bandwidth product
Fig.6 Switching time
characteristics
vs. emitter current
EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000
COLLECTOR CURRENT : IC (A)
Ta=25˚C IE=0mA f=1MHz
100
Cib
10
Ta=25°C Single Pulsed
1ms
1
10ms PW=100ms
Cob
10
0.1
DC Operation
1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V)
0.01 0.01
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Collector output capacitance
vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
Fig.8 Safe operation area
Rev.A
3/4
FML9
Transistors
Di2
10
1000m 100m
FORWARD CURRENT : IF (A)
1
C 5°
REVERSE CURRENT : IR (A)
Ta=125°C
10m 1m 100µ 10µ 1µ 0.1µ
Ta=−25°C
100m
Ta
2 =1
1m
0.1m 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF (V)
Ta
=2 5
Ta
10m
°C
=− 25 °C
Ta=25°C
0
10
20
30
40
50
60
70
REVERSE VOLTAGE : VR (V)
Fig.9 Forward characteristics
Fig.10 Reverse characteristics
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and decidi.