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FML9 Dataheets PDF



Part Number FML9
Manufacturers Rohm
Logo Rohm
Description General purpose transistor
Datasheet FML9 DatasheetFML9 Datasheet (PDF)

FML9 Transistors General purpose transistor (isolated transistor and diode) FML9 A 2SB1689 and a RB461F are housed independently in a UMT package. zApplications DC / DC converter Motor driver zExternal dimensions (Unit : mm) FML9 0.95 0.95 1.9 0.8 0.3 (2) (3) 0.3Min. Each lead has same dimensions zStructure Silicon epitaxial planar transistor Schottky barrier diode ROHM : SMT5 EIAJ : SC-74A zEquivalent circuit (3) (4) (5) Di2 Tr1 (2) (1) zPackaging specifications Type Package Ma.

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FML9 Transistors General purpose transistor (isolated transistor and diode) FML9 A 2SB1689 and a RB461F are housed independently in a UMT package. zApplications DC / DC converter Motor driver zExternal dimensions (Unit : mm) FML9 0.95 0.95 1.9 0.8 0.3 (2) (3) 0.3Min. Each lead has same dimensions zStructure Silicon epitaxial planar transistor Schottky barrier diode ROHM : SMT5 EIAJ : SC-74A zEquivalent circuit (3) (4) (5) Di2 Tr1 (2) (1) zPackaging specifications Type Package Marking Code Basic ordering unit(pieces) FML9 SMT5 L9 TR 3000 0~0.1 zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package (1) 1.6 2.8 0.15 (5) (4) 1.1 2.9 Rev.A 1/4 FML9 Transistors zAbsolute maximum ratings (Ta=25°C) Tr1 Limits Symbol −15 VCBO VCEO −12 VEBO −6 IC −1.5 Collector current ICP −3 Power dissipation Pc 200 Junction temperature Tj 150 Range of storage temperature Tstg −40 to +125 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage ∗1 Single pulse, Pw=1ms. ∗2 Each terminal mounted on a recommended land. Unit V V V A A mW °C °C ∗1 ∗2 Di2 Parameter Symbol Reak reverse voltage VRM Average rectified forward current IF Forward current surge peak (60HZ, 1∞) IFSM Reverse voltage (DC) VR Junction temperature Tj Range of storage temperature Tstg Limits 25 700 3 20 125 −40 to +125 Unit V mA A V °C °C zElectrical characteristics (Ta=25°C) Tr1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −12 −15 −6 − − − 270 − − Typ. − − − − − −110 − 400 12 Max. − − − −100 −100 −200 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=−1mA IC=−10µA IE=−10µA VCB=−15V VEB=−6V IC=−500mA, IB=−25mA VCE=−2V, IC=−200mA VCE=−2V, IE=200mA, f=100MHz VCB=−10V, IE=0mA, f=1MHz Di2 Parameter Forward voltage Reverse current Symbol VF IR Min. − − Typ. − − Max. 490 200 Unit mV µA IF=700mA VR=20V Conditions Rev.A 2/4 FML9 Transistors zElectrical characteristic curves Tr1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=−2V Pulsed COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATUATION VOLTAGE : VBE(sat) (V) 1000 Ta=100°C Ta=25°C Ta=−40°C 10 IC/IB=20/1 VCE=−2V Pulsed Ta=25°C 1 Ta=25°C Pulsed DC CURRENT GAIN : hFE Ta=−40°C VBE(sat) 1 Ta=100°C 0.1 100 0.1 Ta=100°C VCE(sat) IC/IB=50/1 0.01 Ta=25°C Ta=−40°C 0.01 IC/IB=20/1 IC/IB=10/1 10 0.001 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. Fig.2 Base-emitter saturation voltage Fig.3 Collector-emitter saturation voltage collector current vs. collector current vs. collector current 10 TRANSITION FREQUENCY : fT (MHz) 1000 10000 Ta=25°C VCE=−2V f=100MHz SWITCHING TIME : (ns) Ta=25°C COLLECTOR CURRENT : IC (A) VCE=−2V Pulsed VCE=−5V f=100MHz 1000 1 0.1 Ta=100°C Ta=25°C 100 100 tstg tf Ta=−40°C 0.01 10 tdon tr 0.001 0 0.5 1 1.5 10 0.001 0.01 0.1 1 10 1 0.001 0.01 0.1 1 10 BASE TO EMITTER CURRENT : VBE(on) (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.4 Grounded emitter propagation Fig.5 Gain bandwidth product Fig.6 Switching time characteristics vs. emitter current EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 COLLECTOR CURRENT : IC (A) Ta=25˚C IE=0mA f=1MHz 100 Cib 10 Ta=25°C Single Pulsed 1ms 1 10ms PW=100ms Cob 10 0.1 DC Operation 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) 0.01 0.01 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.8 Safe operation area Rev.A 3/4 FML9 Transistors Di2 10 1000m 100m FORWARD CURRENT : IF (A) 1 C 5° REVERSE CURRENT : IR (A) Ta=125°C 10m 1m 100µ 10µ 1µ 0.1µ Ta=−25°C 100m Ta 2 =1 1m 0.1m 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF (V) Ta =2 5 Ta 10m °C =− 25 °C Ta=25°C 0 10 20 30 40 50 60 70 REVERSE VOLTAGE : VR (V) Fig.9 Forward characteristics Fig.10 Reverse characteristics Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and decidi.


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