IRF2903Z

PD - 96988A AUTOMOTIVE MOSFET IRF2903Z IRF2903ZS IRF2903ZL HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 30V RDS(on) = 2.4mΩ G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. ID = 75A D D G D S G D S G D S TO-220AB IRF2903Z G D2Pak IRF2903ZS D TO-262 IRF2903ZL S Absolute Maximum Ratings Gate Drain Max. 260 180 75 1020 290 2.0 ± 20 Source Units A Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current ™ PD @TC = 25°C Power Dissipation Linear Derating Factor VGS EAS (Tested ) IAR EAR TJ TSTG Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Avalanche Current W W/°C V mJ A mJ d Single Pulse Avalanche Energy Tested Value Ù h 290 820 See Fig.12a, 12b, 15, 16 -55 to...