HEXFET Power MOSFET
PD - 96988A
AUTOMOTIVE MOSFET
IRF2903Z IRF2903ZS IRF2903ZL
HEXFET® Power MOSFET
D
Features
l l l l l
Advanced Proces...
Description
PD - 96988A
AUTOMOTIVE MOSFET
IRF2903Z IRF2903ZS IRF2903ZL
HEXFET® Power MOSFET
D
Features
l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
D
VDSS = 30V RDS(on) = 2.4mΩ
G S
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
ID = 75A
D D
G
D
S G D
S G D
S
TO-220AB IRF2903Z
G
D2Pak IRF2903ZS
D
TO-262 IRF2903ZL
S
Absolute Maximum Ratings
Gate
Drain
Max.
260 180 75 1020 290 2.0 ± 20
Source
Units
A
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation Linear Derating Factor VGS EAS (Tested ) IAR EAR TJ TSTG Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Avalanche Current
W W/°C V mJ A mJ
d
Single Pulse Avalanche Energy Tested Value
Ã
h
290 820 See Fig.12a, 12b, 15, 16 -55 to...
Similar Datasheet