IRF540ZSPBF

PD - 95531A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. IRF540ZPbF IRF540ZSPbF IRF540ZLPbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 26.5mΩ G ID = 36A S TO-220AB IRF540ZPbF D2Pak TO-262 IRF540ZSPbF IRF540ZLPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ™ ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage d EAS (Thermally limited) Single Pulse Avalanche Energy h EAS (Tested ) Single Pulse Avalanche Energy Tested Value Ù IAR Avalanche Current g EAR Repetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds i Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case i Case-to-Sink, Flat Greased Surface i Junction-to-Ambient j Junction-to-Ambient (PCB Mount) ...