Power MOSFET. IRF7103PBF Datasheet

IRF7103PBF MOSFET. Datasheet pdf. Equivalent

Part IRF7103PBF
Description HEXFET Power MOSFET
Feature IRF7103PbF l l l l l l l l PD -95037A Adavanced Process Technology Ultra Low On-Resistance Dual N-.
Manufacture International Rectifier
Datasheet
Download IRF7103PBF Datasheet



IRF7103PBF
PD -95037A
IRF7103PbF
l Adavanced Process Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
HEXFET® Power MOSFET
S1 1
G1 2
8 D1
7 D1
VDSS = 50V
S2 3
G2 4
6 D2 RDS(on) = 0.130
5 D2
Top View
ID = 3.0A
Description
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
3.0
2.3
10
2.0
0.016
± 20
4.5
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient „
Min.
–––
Typ.
–––
Max.
62.5
Units
°C/W
11/16/04



IRF7103PBF
IRF7103PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max.
50 ––– –––
––– 0.049 –––
––– 0.11 0.13
––– 0.16 0.20
1.0 ––– 3.0
––– 3.8 –––
––– ––– 2.0
––– ––– 25
––– ––– 100
––– ––– -100
––– 12 30
––– 1.2 –––
––– 3.5 –––
––– 9.0 20
––– 8.0 20
––– 45 70
––– 25 50
Units
V
V/°C
V
S
µA
nA
nC
ns
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 3.0A ƒ
VGS = 4.5V, ID = 1.5A ƒ
VDS = VGS, ID = 250µA
VDS = 15V, ID = 3.0A ƒ
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
VGS = 20V
VGS = - 20V
ID = 2.0A
VDS = 25V
VGS = 10V ƒ
VDD = 25V
ID = 1.0A
RG = 6.0
RD = 25ƒ
––– 4.0 –––
nH
Between lead,6mm(0.25in.)
from package and center G
––– 6.0 –––
of die contact
––– 290 –––
VGS = 0V
––– 140 ––– pF VDS = 25V
––– 37 –––
ƒ = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 2.0
A
showing the
integral reverse
––– ––– 12
p-n junction diode.
G
D
S
––– ––– 1.2
––– 70 100
––– 110 170
V TJ = 25°C, IS = 1.5A, VGS = 0V ƒ
ns TJ = 25°C, IF = 1.5A
nC di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ ISD 1.8A, di/dt 90A/µs, VDD V(BR)DSS,
TJ 150°C
ƒ Pulse width 300µs; duty cycle 2%.
„ Surface mounted on FR-4 board, t 10sec.





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