SMPS MOSFET
PD - 95664
SMPS MOSFET
IRFP90N20DPbF
HEXFET® Power MOSFET
Applications High frequency DC-DC converters l Lead-Free
l
...
Description
PD - 95664
SMPS MOSFET
IRFP90N20DPbF
HEXFET® Power MOSFET
Applications High frequency DC-DC converters l Lead-Free
l
VDSS
200V
RDS(on) max
0.023Ω
ID
94Ao
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
l
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max. 94o
66 380 580 3.8 ± 30 6.7 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/°C V V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
––– 0.24 –––
Max.
0.26 ––– 40
Units
°C/W
Notes
through o
are on page 8
www.irf.com
1
7/30/04
IRFP90N20DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. U...
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